Department of Modern Physics, Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
J Chem Phys. 2010 Mar 28;132(12):124301. doi: 10.1063/1.3360311.
The generalized oscillator strengths, differential cross sections, as well as the integral cross sections for electron impact excitation of the B (1)Delta, C (1)Pi, and D (1)Sigma(+) states of N(2)O have been determined at an incident electron energy of 2500 eV. A generalized oscillator strength analysis reveals that the B (1)Delta<--X (1)Sigma(+) transition is dominated by the quadrupolar component. From the comparison to the previous experimental results, it is found that the first Born approximation is not satisfied for the C (1)Pi excitation while it is valid for the D (1)Sigma(+) excitation at an incident electron energy of 200 eV. The BE-scaled integral cross section for the B (1)Delta excitation from its threshold to 5000 eV was calculated based on its generalized oscillator strength, and the present integral cross sections for the excitation of the C (1)Pi and D (1)Sigma(+) states are in good agreement with the calculations using the BEf-scaling approach.
在 2500eV 的入射电子能量下,确定了 N2O 的 B(1)Δ、C(1)Π和 D(1)Σ+(+)态的电子碰撞激发的广义振子强度、微分截面以及积分截面。广义振子强度分析表明,B(1)Δ<--X(1)Σ+(+)跃迁主要由四极分量主导。通过与以前的实验结果进行比较,发现对于 C(1)Π激发,第一玻恩近似不成立,而对于 D(1)Σ+(+)激发,在 200eV 的入射电子能量下成立。基于其广义振子强度,计算了从其阈值到 5000eV 的 B(1)Δ激发的 BE 标度积分截面,并且对于 C(1)Π和 D(1)Σ+(+)态激发的本积分截面与使用 BEf 标度方法的计算结果非常吻合。