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4H-环戊并[2,1-b:3,4-b']噻吩衍生物及其 4-杂原子取代类似物的电子和光学性质:理论与实验的联合比较。

Electronic and optical properties of 4H-cyclopenta[2,1-b:3,4-b']bithiophene derivatives and their 4-heteroatom-substituted analogues: a joint theoretical and experimental comparison.

机构信息

School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30332-0400, USA.

出版信息

J Phys Chem B. 2010 Nov 18;114(45):14397-407. doi: 10.1021/jp100774r. Epub 2010 Apr 16.

DOI:10.1021/jp100774r
PMID:20397679
Abstract

The electronic and optical properties of 2,6-dialkyl and 2,6-bis(5-alkyl-2-thienyl) derivatives of the fused-ring systems 4H-cyclopenta[2,1-b:3,4-b']bithiophene, 4,4-di-n-hexyl-4H-cyclopenta[2,1-b:3,4-b']bithiophene, 4H-cyclopenta[2,1-b:3,4-b']bithiophene-4-one, 4-alkyl and 4-aryldithieno[3,2-b:2',3'-d]pyrrole, 4-phenyldithieno[3,2-b:2',3'-d]phosphole, 4-phenyldithieno[3,2-b:2',3'-d]phosphole 4-oxide, dithieno[3,2-b:2',3'-d]thiophene, dithieno[3,2-b:2',3'-d]thiophene 4-oxide, and dithieno[3,2-b:2',3'-d]thiophene 4,4-dioxide have been compared to those of the analogous unbridged 5,5'-substituted 2,2'-bithiophene derivatives using electrochemistry, UV-visible absorption and emission spectroscopy, and DFT and TD-DFT calculations. The planarization in the fused-ring compounds means that the methylene-bridged cyclopentabithiophenes are more readily oxidized than their unbridged bithiophene analogues. In each case, the bridging group (X) lies on a nodal plane of the HOMO; accordingly, within each series of fused-ring compounds, electrochemical oxidation potentials and calculated ionization potentials depend primarily on the inductive donor/acceptor strength of the bridging group. On the other hand, significant LUMO coefficients can be found on X groups with π-donor or acceptor properties; accordingly, the electrochemical reduction potentials, calculated electron affinities, and the energies of the HOMO→LUMO optical transitions depend on both inductive and mesomeric donor and acceptor strengths. In particular, within the 2,6-bis(5-alkyl-2-thienyl) series, increasingly electron-withdrawing bridging groups lead to a bathochromic shift and weakening of the low-energy absorption band relative to that of methylene- or π-donor-bridged examples and also to a loss of vibronic structure, with the compound that has the strongest π-accepting bridge of those examined (X = CO) showing a particularly low-energy and weak band. The fluorescence of acceptor-bridged compounds exhibits greater Stokes shifts and a loss of vibronic structure relative to those of methylene- or π-donor-bridged analogues, with the carbonyl-bridged derivative showing no observable fluorescence. These results can be related to increasing localization of the LUMO on the core and toward the bridging group, leading to increased charge-transfer character for the first excited state. The radical cations of some examples have been generated by chemical oxidation and investigated using visible-NIR and ESR spectroscopy and DFT and TD-DFT calculations. The absorption spectra of the radical cations of the 2,6-bis(5-alkyl-2-thienyl) compounds are generally similar to those previously reported for quaterthiophene derivatives, while the hyperfine couplings obtained from ESR spectra are consistent with delocalization of the unpaired electron over both the core and terminal thienyl rings of the π system.

摘要

已将电子和光学性质的 2,6-二烷基和 2,6-双(5-烷基-2-噻吩基)稠环体系 4H-环戊并[2,1-b:3,4-b']噻吩、4,4-二正己基-4H-环戊并[2,1-b:3,4-b']噻吩、4H-环戊并[2,1-b:3,4-b']噻吩-4-酮、4-烷基和 4-芳基二噻吩[3,2-b:2',3'-d]吡咯、4-苯二噻吩[3,2-b:2',3'-d]膦、4-苯二噻吩[3,2-b:2',3'-d]膦 4-氧化物、二噻吩[3,2-b:2',3'-d]噻吩、二噻吩[3,2-b:2',3'-d]噻吩 4-氧化物和二噻吩[3,2-b:2',3'-d]噻吩 4,4-二氧化物与类似的无桥接 5,5'-取代 2,2'-联噻吩衍生物进行了比较,使用电化学、紫外-可见吸收和发射光谱以及 DFT 和 TD-DFT 计算。稠环化合物的平面化意味着亚甲基桥连的环戊并噻吩比它们无桥接的噻吩类似物更容易被氧化。在每种情况下,桥接基团(X)位于 HOMO 的节点平面上;因此,在每个稠环化合物系列中,电化学氧化电位和计算的电离电位主要取决于桥接基团的诱导供体/受体强度。另一方面,在具有π-供体或受体性质的 X 基团上可以找到显著的 LUMO 系数;因此,电化学还原电位、计算电子亲合能和 HOMO→LUMO 光学跃迁的能量取决于诱导和离域供体和受体的强度。特别是,在 2,6-双(5-烷基-2-噻吩基)系列中,越来越强的吸电子桥接基团导致相对于亚甲基或π-供体桥接的例子的低能量吸收带的红移和减弱,并且也失去了振子结构,其中研究过的具有最强π-接受桥的化合物(X = CO)表现出特别低能量和弱的带。与亚甲基或π-供体桥接的类似物相比,受体桥接化合物的荧光表现出更大的斯托克斯位移和振子结构的损失,其中羰基桥接的衍生物没有观察到荧光。这些结果可以与核心和桥接基团上 LUMO 的局部化增加有关,从而导致第一激发态的电荷转移特性增加。一些例子的自由基阳离子已通过化学氧化生成,并使用可见-近红外和 ESR 光谱以及 DFT 和 TD-DFT 计算进行了研究。2,6-双(5-烷基-2-噻吩基)化合物的自由基阳离子的吸收光谱通常与以前报道的四噻吩衍生物的吸收光谱相似,而从 ESR 光谱获得的超精细耦合与未配对电子在核心和末端噻吩环上的离域一致π 体系。

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