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Rb(16)Cd(25.39(3))Sb(36):一种含有无限十二面体链的缺电子 Zintl 相。

Rb(16)Cd(25.39(3))sb(36): an electron-deficient zintl phase containing infinite dodecahedron chains.

机构信息

Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China.

出版信息

Inorg Chem. 2010 Jul 5;49(13):5890-6. doi: 10.1021/ic100360n.

Abstract

A novel ternary antimonide Rb(16)Cd(25.39(3))Sb(36) has been synthesized by a solid-state reaction of the appropriate amount of elements in a welded niobium tube at 530 degrees C. The compound crystallizes in orthorhombic space group Cmcm (No. 63) with a = 16.499(5) A, b = 12.391(4) A, c = 12.400(4) A, and Z = 1. The structure features a new 3D network constructed of chains of Rb(+)-centered dodecahedra running along [001]. The atomic distribution of the Cd(8)Sb(12) dodecahedron presents an energetically favored pattern without any Cd-Cd bonding. The formation of the phase and the occurrence of a very narrow phase width of Rb(16)Cd(24+x)Sb(36) [0.94(2) < or = x < or = 1.47(3)] have been studied in detail. The Fermi level of the title compound is expected to be located between those of the hypothetical models of "Rb(16)Cd(24)Sb(36)" (I, poor metallic) and "[Rb(16)Cd(24)Sb(36)] + 4e" (II, narrow-band-gap semiconductor), which agrees well with the experimental measurements. In the temperature range of 300-473 K, the as-synthesized Rb(16)Cd(25.39(3))Sb(36) exhibits p-type semiconductor behavior and shows temperature-independent thermal conductivities (around 0.49 W/m.K). The electrical conductivity, Seebeck coefficient, and figure of merit (ZT) of Rb(16)Cd(25.39(3))Sb(36) are temperature-dependent; these values are 57.4 S/cm, +81.4 microV/K, and 0.04, respectively, at 466 K.

摘要

一种新型三元锑化物 Rb(16)Cd(25.39(3))Sb(36) 是通过在 530°C 的铌管中将适量元素进行固态反应合成的。该化合物在正交晶系 Cmcm(No.63)空间群中结晶,a=16.499(5)A,b=12.391(4)A,c=12.400(4)A,Z=1。该结构的特点是由沿[001]方向排列的 Rb(+) 中心十二面体链构成的新型 3D 网络。Cd(8)Sb(12)十二面体的原子分布呈现出能量有利的模式,没有任何 Cd-Cd 键。详细研究了 Rb(16)Cd(24+x)Sb(36)[0.94(2)<=x<=1.47(3)]相的形成和非常窄的相宽度。标题化合物的费米能级预计位于假设模型“Rb(16)Cd(24)Sb(36)”(I,金属性差)和“[Rb(16)Cd(24)Sb(36)]+4e”(II,窄带隙半导体)之间,这与实验测量结果吻合较好。在 300-473 K 的温度范围内,合成的 Rb(16)Cd(25.39(3))Sb(36) 表现出 p 型半导体行为,并表现出与温度无关的热导率(约 0.49 W/m.K)。Rb(16)Cd(25.39(3))Sb(36) 的电导率、塞贝克系数和品质因数(ZT)随温度变化;这些值分别在 466 K 时为 57.4 S/cm、+81.4 μV/K 和 0.04。

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