Department of Chemistry and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam-Gu, Pohang, Korea 790-784.
Langmuir. 2010 Jul 20;26(14):12278-84. doi: 10.1021/la101254k.
The site-dependent and spontaneous functionalization of 4-bromobenzene diazonium tetrafluoroborate (4-BBDT) and its doping effect on a mechanically exfoliated graphene (MEG) were investigated. The spatially resolved Raman spectra obtained from both edge and basal region of MEG revealed that 4-BBDT molecules were noncovalently functionalized on the basal region of MEG, while they were covalently bonded to the edge of MEG. The chemical doping effect induced by noncovalently functionalized 4-BBDT molecules on a basal plane region of MEG was successfully explicated by Raman spectroscopy. The position of Fermi level of MEG and the type of doping charge carrier induced by the noncovalently adsorbed 4-BBDT molecules were determined from systematic G band and 2D band changes. The successful spectroscopic elucidation of the different bonding characters of 4-BBDT depending on the site of graphene is beneficial for the fundamental studies about the charge transfer phenomena of graphene as well as for the potential applications, such as electronic devices, hybridized composite structures, etc.
研究了 4-溴苯重氮四氟硼酸盐(4-BBDT)在位置依赖和自发的条件下的功能化及其对机械剥离石墨烯(MEG)的掺杂效应。从 MEG 的边缘和基底区域获得的空间分辨拉曼光谱表明,4-BBDT 分子非共价功能化在 MEG 的基底区域,而它们与 MEG 的边缘共价键合。通过拉曼光谱成功解释了非共价功能化的 4-BBDT 分子在 MEG 基底平面区域引起的化学掺杂效应。通过系统的 G 带和 2D 带变化,确定了 MEG 的费米能级位置和非共价吸附的 4-BBDT 分子诱导的掺杂载流子类型。成功的光谱阐明了 4-BBDT 根据石墨烯位置的不同键合特性,有利于对石墨烯的电荷转移现象的基础研究以及对电子器件、混合复合材料结构等潜在应用的研究。