Key Laboratory of Automobile Materials, Ministry of Education, and School of Materials Science and Engineering, Jilin University, Changchun 130022, China.
ACS Nano. 2010 Jul 27;4(7):3781-8. doi: 10.1021/nn101014k.
For electrical conductance in polycrystalline metallic films and wires, the reflection coefficient of electrons at grain boundaries is explored and found to be proportional to the square root of the melting points of metals. As validated by available experimental results, this exploration enables classical models to take an essential role in theoretically predicting the electrical conductance of low-dimensional metals. One thus sees that the mechanism dominating the suppression of electrical conductance is transformed from the surface scattering into the grain boundary scattering as the ratio of film thickness (or wire diameter) to grain size rises. Furthermore, the impact of grain boundary scattering becomes less important for metals with lower melting points.
对于多晶金属薄膜和线材的电导率,研究了电子在晶界处的反射系数,发现其与金属的熔点平方根成正比。通过现有的实验结果验证,这种探索使经典模型在理论预测低维金属的电导率方面发挥了重要作用。因此可以看出,随着薄膜厚度(或线材直径)与晶粒尺寸之比的增加,主导电导率抑制的机制从表面散射转变为晶界散射。此外,对于熔点较低的金属,晶界散射的影响变得不那么重要。