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控制合成定向共掺杂 ZnO 团簇纳米组装体。

Controlled fabrication of oriented co-doped ZnO clustered nanoassemblies.

机构信息

Department of Metallurgical Engineering & Materials Science, Indian Institute of Technology Bombay, Mumbai 400076, India.

出版信息

J Colloid Interface Sci. 2010 Sep 1;349(1):19-26. doi: 10.1016/j.jcis.2010.05.036. Epub 2010 May 16.

Abstract

Clustered nanoassemblies of Mn doped ZnO and co-doped ZnO (Mn, Sn co-doped ZnO; Mn, Sb co-doped ZnO; and Mn, Bi co-doped ZnO) were prepared by refluxing their respective precursors in diethylene glycol medium. The co-doping elements, Sn, Sb and Bi exist in multi oxidation states by forming Zn-O-M (M=Sb, Bi and Sn) bonds in hexagonal wurtzite nanostructure. The analyses of detailed structural characterization performed by XRD, X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM), show that co-doping ions are successfully incorporated into the ZnO nanostructure and do not appear as precipitates or secondary phases. HRTEM analysis also confirmed the oriented attachment of nanocrystals as well as their defect structures. The formation/activation of higher amount of intrinsic host defects, for instance, oxygen vacancies in co-doped ZnO as compared to Mn doped ZnO sample is evident from Raman spectra. The doped and co-doped samples exhibit ferromagnetic like behavior at room temperature presumably due to the presence of defects. Specifically, it has been observed that the incorporation of dopant and co-dopants into ZnO structure can modulate the local electronic structure due to the formation/activation of defects and hence, cause significant changes in their structural, vibrational, optical and magnetic properties.

摘要

采用回流法,在二甘醇介质中分别制备了 Mn 掺杂 ZnO 和共掺杂 ZnO(Mn、Sn 共掺杂 ZnO、Mn、Sb 共掺杂 ZnO 和 Mn、Bi 共掺杂 ZnO)的纳米团簇。共掺杂元素 Sn、Sb 和 Bi 通过在六方纤锌矿纳米结构中形成 Zn-O-M(M=Sb、Bi 和 Sn)键,以多种氧化态存在。详细的结构特征分析通过 XRD、X 射线光电子能谱(XPS)和高分辨率透射电子显微镜(HRTEM)进行,结果表明共掺杂离子成功地掺入 ZnO 纳米结构中,且不会以沉淀或次生相的形式出现。HRTEM 分析还证实了纳米晶的定向附着及其缺陷结构。与 Mn 掺杂 ZnO 样品相比,共掺杂 ZnO 中形成/激活了更多的本征宿主缺陷,例如氧空位,这从拉曼光谱中可以明显看出。掺杂和共掺杂样品在室温下表现出类铁磁性,可能是由于缺陷的存在。具体来说,已经观察到掺杂和共掺杂到 ZnO 结构中可以由于缺陷的形成/激活而调制局部电子结构,从而导致其结构、振动、光学和磁性能发生显著变化。

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