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非正方形势井轮廓和组成梯度 Cd(1-x)Zn(x)Se/Cd(x)Zn(1-x)Se 纳米晶中猝灭的抑制。

Non-square-well potential profile and suppression of blinking in compositionally graded Cd(1-x)Zn(x)Se/Cd(x)Zn(1-x)Se nanocrystals.

机构信息

School of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia.

出版信息

Nanoscale. 2010 May;2(5):728-33. doi: 10.1039/b9nr00322c. Epub 2010 Feb 5.

Abstract

Random blinking is a major problem on the way to successful applications of semiconducting nanocrystals in optoelectronics and photonics, which until recently had neither a practical solution nor a theoretical interpretation. An experimental breakthrough has recently been made by fabricating non-blinking Cd(1-x)Zn(x)Se/ZnSe graded nanocrystals [Wang et al., Nature, 2009, 459, 686]. Here, we (1) report an unequivocal and detailed theoretical investigation to understand the properties (e.g., profile) of the potential-well and the distribution of Zn content with respect to the nanocrystal radius and (2) develop a strategy to find the relationship between the photoluminescence (PL) energy peaks and the potential-well due to Zn distribution in nanocrystals. It is demonstrated that the non-square-well potential can be varied in such a way that one can indeed control the PL intensity and the energy-level difference (PL energy peaks) accurately. This implies that one can either suppress the blinking altogether, or alternatively, manipulate the PL energy peaks and intensities systematically to achieve a controlled non-random intermittent luminescence. The approach developed here is based on the ionization energy approximation and as such is generic and can be applied to any non-free-electron nanocrystals.

摘要

随机闪烁是半导体纳米晶体在光电学中成功应用的主要问题,直到最近,这个问题既没有实际的解决方案,也没有理论解释。最近,通过制造不闪烁的 Cd(1-x)Zn(x)Se/ZnSe 梯度纳米晶体,取得了实验上的突破[Wang 等人,《自然》,2009 年,459,686]。在这里,我们(1)报告了一个明确和详细的理论研究,以了解势阱的性质(例如,轮廓)和锌含量相对于纳米晶半径的分布,(2)开发了一种策略来找到由于纳米晶中锌分布导致的光致发光(PL)能量峰与势阱之间的关系。结果表明,可以改变非正方形势阱,从而可以准确地控制 PL 强度和能级差(PL 能量峰)。这意味着可以完全抑制闪烁,或者可以系统地操纵 PL 能量峰和强度,以实现受控的非随机间歇发光。这里开发的方法基于电离能近似,因此是通用的,可以应用于任何非自由电子纳米晶体。

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