Taraci J L, Hÿtch M J, Clement T, Peralta P, McCartney M R, Drucker Jeff, Picraux S T
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ, USA.
Nanotechnology. 2005 Oct;16(10):2365-71. doi: 10.1088/0957-4484/16/10/062. Epub 2005 Sep 2.
A method for obtaining detailed two-dimensional strain maps in nanowires and related nanoscale structures has been developed. The approach relies on a combination of lattice imaging by high-resolution transmission electron microscopy and geometric phase analysis of the resulting micrographs using Fourier transform routines. We demonstrate the method for a germanium nanowire grown epitaxially on Si(111) by obtaining the strain components epsilon(xx), epsilon(yy), epsilon(xy), the mean dilatation, and the rotation of the lattice planes. The resulting strain maps are demonstrated to allow detailed evaluation of the strains and loading on nanowires.
一种用于获取纳米线及相关纳米尺度结构中详细二维应变图的方法已被开发出来。该方法依赖于高分辨率透射电子显微镜的晶格成像以及使用傅里叶变换程序对所得显微照片进行几何相位分析的结合。我们通过获取应变分量ε(xx)、ε(yy)、ε(xy)、平均膨胀以及晶格平面的旋转，展示了在Si(111)上外延生长的锗纳米线的该方法。结果表明，所得应变图能够对纳米线上的应变和载荷进行详细评估。
