Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany.
Phys Rev Lett. 2010 May 28;104(21):217401. doi: 10.1103/PhysRevLett.104.217401.
It is demonstrated that valence-band mixing in GaAs quantum wells tremendously modifies electronic transport. A coherent control scheme in which ultrafast currents are optically injected into undoped GaAs quantum wells upon excitation with femtosecond laser pulses is employed. An oscillatory dependence of the injection current amplitude and direction on the excitation photon energy is observed. A microscopic theoretical analysis shows that this current reversal is caused by the coupling of the light- and heavy-hole bands and that the hole currents dominate the overall current response. These surprising consequences of band mixing illuminate fundamental physics as they are unique for experiments which are able to monitor electronic transport resulting from carriers with relatively large momenta.
研究表明,砷化镓量子阱中的能带混合极大地改变了电子输运。采用超快电流在飞秒激光脉冲激发下光学注入未掺杂砷化镓量子阱的相干控制方案。观察到注入电流幅度和方向随激发光子能量的振荡依赖性。微观理论分析表明,这种电流反转是由轻孔和重孔带的耦合引起的,并且空穴电流主导着整体电流响应。这些带混合的惊人后果阐明了基本物理,因为它们对于能够监测具有相对较大动量的载流子引起的电子输运的实验是独一无二的。