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用于全光信息处理的非线性半导体激光器和放大器。

Nonlinear semiconductor lasers and amplifiers for all-optical information processing.

机构信息

School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ, United Kingdom.

出版信息

Chaos. 2010 Sep;20(3):037102. doi: 10.1063/1.3491096.

Abstract

The nonlinear properties of semiconductor lasers and laser amplifiers when subject to optical injection are reviewed and new results are presented for multisection lasers, vertical cavity semiconductor optical amplifiers, and surface-emitting lasers. The main underlying material parameters are outlined and the key design approaches are discussed for both edge-emitting and vertical cavity devices. An overview of theoretical modeling approaches is discussed and a summary of key experimental results is presented. The practical use of optically injected edge-emitting and vertical cavity semiconductor lasers and laser amplifiers is illustrated with examples of applications including, among others, optical logic and chaotic communication.

摘要

当半导体激光器和激光放大器受到光注入时,其非线性特性会受到影响。本文回顾了这方面的研究,并介绍了多节激光器、垂直腔半导体光放大器和表面发射激光器的新研究成果。本文概述了主要的基本材料参数,并讨论了边发射和垂直腔器件的关键设计方法。本文还讨论了理论建模方法的概述,并总结了关键实验结果。本文通过光注入边发射和垂直腔半导体激光器和激光放大器的实际应用示例,说明了其在光学逻辑和混沌通信等应用中的实用性。

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