Effect of atmospheric composition and pressure on the laser ablation of (GeTe)(85)Sn(15) chalcogenide thin films.

Laser ablation of (GeTe)(85)Sn(15) thin films as a function of atmospheric exposure was monitored in real time by transient reflectivity. The observed optical changes were correlated with microstructural analysis. Among the key findings were that the presence of water in the atmosphere during laser irradiation of a thin-film structure reduced the incident laser power required for ablation by as much as a factor of 2. The magnitude of the effect was dependent on both H(2)O vapor pressure and duration of exposure to the vapor. The reduction of laser power necessary to ablate was partially reversed by exposure of the thin-film structure to vacuum. Significantly, exposure to other (dry) gases such as N(2) did not change the ablation threshold from that observed in vacuum. We determined that dome formation and ablation occurred at lower temperatures in the presence of water. In addition, the power necessary to crystallize the amorphous chalcogenide layer in the structure was independent of atmospheric composition or pressure. Microstructure analysis showed the presence of H(2)O fostered the formation of a nonuniform distribution of the chalcogenide material in the ablated region. The experimental results are consistent with our model that ablation is assisted by high pressures produced by vaporization of absorbed liquid water.