Ertl Center for Electrochemistry and Catalysis, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea.
Phys Chem Chem Phys. 2010 Dec 14;12(46):15247-50. doi: 10.1039/c0cp00749h. Epub 2010 Nov 2.
P-type thermoelectric bismuth telluride nanowires were fabricated by pulsed electrodeposition in anodic aluminium oxide (AAO) membranes. Subsequently, the nanowires were annealed at 423, 523 and 673 K in an inert atmosphere for 4 h. With increasing temperature, it was observed that the Te compound incongruently sublimates due to its high vapor pressure, leading to disproportionation (from Bi(2)Te(3) to Bi(4)Te(3)via Bi(4)Te(5)). The crystalline structure of the nanowires was then investigated using XRD and SAED, with nanowire compositions investigated using an EDX attached to a TEM. The crystallinity of the nanowires was found to be enhanced with increased annealing temperature, and nanowires annealed at 673 K were stably maintained in the Bi(4)Te(3) phase. Additionally, the Seebeck coefficient was determined and the thermopower of nanowires annealed at a temperature of 423 K was shown to be slightly enhanced. Significantly suppressed Seebeck values for annealing temperatures of 523 K and 673 K were also observed.
通过在阳极氧化铝（AAO）膜中进行脉冲电沉积，制备了 P 型碲化铋纳米线。随后，将纳米线在惰性气氛中于 423、523 和 673 K 下退火 4 小时。随着温度的升高，由于 Te 化合物的蒸气压很高，观察到 Te 化合物会不一致地升华，导致歧化（从 Bi2Te3 通过 Bi4Te5 到 Bi4Te3）。然后使用 XRD 和 SAED 研究了纳米线的晶体结构，使用连接到 TEM 的 EDX 研究了纳米线的成分。发现随着退火温度的升高，纳米线的结晶度得到增强，并且在 673 K 下退火的纳米线稳定地保持在 Bi4Te3 相中。此外，还确定了 Seebeck 系数，并表明在 423 K 下退火的纳米线的热电功率略有增强。对于 523 K 和 673 K 的退火温度，还观察到 Seebeck 值显著抑制。
