Institut Carnot de Bourgogne, CNRS UMR 5027, 9, Avenue Alain Savary, BP 47 870, F-21078 Dijon Cedex, France.
J Chem Phys. 2010 Nov 14;133(18):184302. doi: 10.1063/1.3494539.
The interaction-induced dipole moment surface of the van der Waals CH(4)-N(2) complex has been calculated for a broad range of intermolecular separations R and configurations in the approximation of the rigid interacting molecules at the MP2 and CCSD(T) levels of theory using the correlation-consistent aug-cc-pVTZ basis set with the basis set superposition error correction. The simple model to account for the exchange effects in the range of small overlap of the electron shells of interacting molecules and the induction and dispersion interactions for large R has been suggested. This model allows describing the dipole moment of van der Waals complexes in analytical form both for large R, where induction and dispersion have the key role, and for smaller R including whole ranges of their potential wells, where the exchange effects are important. The proposed model was tested on a number of configurations of the CH(4)-N(2) complex and was applied for the analytical description of the dipole moment surface for the family of the most stable configurations of the CH(4)-N(2) complex.
范德华 CH(4)-N(2)复合物的相互作用诱导偶极矩表面已在刚性相互作用分子的近似下,使用关联一致 aug-cc-pVTZ 基组和基组叠加误差校正,在 MP2 和 CCSD(T)理论水平上,针对广泛的分子间分离 R 和构型进行了计算。已经提出了一种简单的模型,用于在相互作用分子的电子壳层小重叠范围内解释交换效应,以及在大 R 范围内解释感应和色散相互作用。该模型允许以解析形式描述范德华复合物的偶极矩,适用于诱导和色散起关键作用的大 R 范围,以及包括其势阱的整个范围的小 R 范围,其中交换效应很重要。所提出的模型已在 CH(4)-N(2)复合物的多个构型上进行了测试,并应用于 CH(4)-N(2)复合物最稳定构型族的偶极矩表面的解析描述。