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单壁碳纳米管表面过渡金属低浓度替代掺杂的密度泛函理论研究

DFT studies of low concentration substitutional doping of transition-metals on single-walled carbon nanotube surface.

作者信息

Mashapa Matete G, Ray Suprakas Sinha

机构信息

DST/CSIR Nanotechnology Innovation Centre, National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001, Republic of South Africa.

出版信息

J Nanosci Nanotechnol. 2010 Dec;10(12):8180-4. doi: 10.1166/jnn.2010.3586.

Abstract

Using first principles-density functional theory, a theoretical study of the electronic properties of (5, 5) armchair single-walled carbon nanotube doped with transitions metals (Fe, Co and Ni) is presented. The generalized gradient approximation was used for the exchange-correlation potentials. The energy cut-off of 500 eV was adopted in the study. The main features of electronic band structure and density of states are shown. A systematic comparison of the density of states as well as band structures of pure and doped SWCNT is made. The contribution of the different bands was analyzed from the total and partial density of states curves. These metals are used as catalysts during synthesis of single-walled carbon nanotubes and hence, the choice we have made. Where data is available, the results are compared with previous calculations and with experimental measurements.

摘要

采用第一性原理-密度泛函理论,对掺杂过渡金属(铁、钴和镍)的(5, 5)扶手椅型单壁碳纳米管的电子性质进行了理论研究。交换关联势采用广义梯度近似。研究中采用了500 eV的能量截止值。展示了电子能带结构和态密度的主要特征。对纯单壁碳纳米管和掺杂单壁碳纳米管的态密度以及能带结构进行了系统比较。从总态密度和分波态密度曲线分析了不同能带的贡献。这些金属在单壁碳纳米管的合成过程中用作催化剂,因此我们做出了这样的选择。在有数据的情况下,将结果与先前的计算以及实验测量进行了比较。

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