Division of Materials Science and Engineering, Ames Laboratory, Ames, Iowa, 50011, USA.
Phys Rev Lett. 2010 Dec 10;105(24):245501. doi: 10.1103/PhysRevLett.105.245501. Epub 2010 Dec 7.
In situ x-ray diffraction (XRD) coupled with molecular dynamics (MD) simulations have been used to quantify antisite defect trapping during crystallization. Rietveld refinement of the XRD data revealed a marked lattice distortion which involves an a axis expansion and a c axis contraction of the stable C11b phase. The observed lattice response is proportional in magnitude to the growth rate, suggesting that the behavior is associated with the kinetic trapping of lattice defects. MD simulations demonstrate that this lattice response is due to incorporation of 1% to 2% antisite defects during growth.
原位 X 射线衍射 (XRD) 结合分子动力学 (MD) 模拟已被用于量化结晶过程中的反位缺陷捕获。XRD 数据的 Rietveld 精修揭示了明显的晶格畸变,涉及稳定 C11b 相的 a 轴膨胀和 c 轴收缩。观察到的晶格响应在大小上与生长速率成正比,表明这种行为与晶格缺陷的动力学捕获有关。MD 模拟表明,这种晶格响应是由于在生长过程中掺入了 1%至 2%的反位缺陷。