Critical behavior near the Lifshitz point in Sn(2)P(2)(S(1 - x)Se(x))(6) ferroelectric semiconductors from thermal diffusivity measurements.

The thermal diffusivity of the ferroelectric family Sn(2)P(2)(Se(x)S(1 - x))(6) (0 ≤ x ≤ 1) has been measured by a high-resolution ac photopyroelectric technique, using single crystals, with the aim of studying the evolution of the ferroelectric transition with Se doping. Its change from second order character to first order while passing the Lifshitz point (x approximately 0.28) has been evaluated, as well as the splitting of the transition at high Se concentrations. The critical behavior of the ferroelectric transition in terms of the different universality classes and their underlying physical dominant effects (tricriticality, long-range dipole interactions, Lifshitz point) has been discussed using thermal diffusivity measurements in the very close vicinity of the critical temperature. This study reveals that for Se concentrations around the Lifshitz point, long-range dipole interactions do not play a significant role and that the critical parameters are close to those predicted for the Lifshitz universality class.