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在多孔材料中受限的向列液晶中的记忆和拓扑挫折。

Memory and topological frustration in nematic liquid crystals confined in porous materials.

机构信息

Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan.

出版信息

Nat Mater. 2011 Apr;10(4):303-9. doi: 10.1038/nmat2982. Epub 2011 Mar 20.

Abstract

Orientational ordering is key to functional materials with switching capability, such as nematic liquid crystals and ferromagnetic and ferroelectric materials. We explored the confinement of nematic liquid crystals in bicontinuous porous structures with smooth surfaces that locally impose normal orientational order on the liquid crystal. We find that frustration leads to a high density of topological defect lines permeating the porous structures, and that most defect lines are made stable by looping around solid portions of the confining material. Because many defect trajectories are possible, these systems are highly metastable and efficient in memorizing the alignment forced by external fields. Such memory effects have their origin in the topology of the confining surface and are maximized in a simple periodic bicontinuous cubic structure. We also show that nematic liquid crystals in random porous networks exhibit a disorder-induced slowing-down typical of glasses that originates from activated collisions and rearrangements of defect lines. Our findings offer the possibility to functionalize orientationally ordered materials through topological confinement.

摘要

取向有序是具有切换能力的功能材料的关键,例如向列液晶和铁磁和铁电材料。我们探索了在具有光滑表面的双连续多孔结构中对向列液晶的限制,该表面局部对液晶施加正常的取向有序。我们发现,受挫导致拓扑缺陷线的高密度渗透多孔结构,并且大多数缺陷线通过围绕限制材料的固体部分进行循环而变得稳定。由于许多缺陷轨迹是可能的,因此这些系统高度亚稳,并且在外场强制下有效地记忆取向。这种记忆效应源于约束表面的拓扑结构,并且在简单的周期性双连续立方结构中最大化。我们还表明,随机多孔网络中的向列液晶表现出典型的玻璃无序减速,其起源于激活的碰撞和缺陷线的重排。我们的发现为通过拓扑约束来功能化取向有序材料提供了可能性。

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