Institute of Optics and Atomic Physics, Technische Universität Berlin, 10623 Berlin, Germany.
Opt Lett. 2011 May 1;36(9):1644-6. doi: 10.1364/OL.36.001644.
A Raman laser based on a bulk silicon single crystal with 1.127 μm emission wavelength is demonstrated. The Si crystal with 30 mm length was placed into an external cavity and pumped by a Q-switched Nd:YAG master oscillator power amplifier system. Strong defocusing of the pump and Raman laser beam by free carriers was compensated by an intracavity lens. Raman laser operation with a pulse duration of 2.5 ns was identified by a Raman laser threshold significantly lower than the single-pass stimulated Raman-scattering threshold. Linear absorption losses of the 1.06415 μm pump radiation are strongly reduced by cooling the Si crystal to a temperature of 10 K.
基于发射波长为 1.127μm 的块状硅单晶，演示了一种拉曼激光器。30mm 长的 Si 晶体被放置在一个外腔中，由一个调 Q 开关的 Nd:YAG 主振荡器功率放大器系统泵浦。通过腔内透镜补偿了自由载流子对泵浦和拉曼激光束的强离焦。通过拉曼激光阈值明显低于单通受激拉曼散射阈值，确认了脉冲持续时间为 2.5ns 的拉曼激光运转。通过将 Si 晶体冷却到 10K 的温度，将 1.06415μm 泵浦辐射的线性吸收损耗大大降低。
