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掺锗光纤/预制棒中光致缺陷的演变:拉丝的影响。

Evolution of photo-induced defects in Ge-doped fiber/preform: influence of the drawing.

作者信息

Alessi A, Girard S, Cannas M, Agnello S, Boukenter A, Ouerdane Y

机构信息

Laboratoire H. Curien, UMR CNRS 5516, Université Jean Monnet, Saint-Etienne, France.

出版信息

Opt Express. 2011 Jun 6;19(12):11680-90. doi: 10.1364/OE.19.011680.

Abstract

We have studied the generation mechanisms of two different radiation-induced point defects, the Ge(1) and Ge(2) centers, in a germanosilicate fiber and in its original preform. The samples have been investigated before and after X-ray irradiation using the confocal microscopy luminescence and the electron paramagnetic resonance techniques. Our experimental results show the higher radiation sensitivity of the fiber as compared to the perform and suggest a relation between Ge(1) and Ge(2) generation. To explain our data we have used different models, finding that the destruction probability of the Ge(1) and Ge(2) defects is larger in fiber than in preform, whereas the generation one is similar. Finally we found that the higher radiation sensitivity of the fiber at low doses is essentially related to the presence of germanium lone pair center generated by the drawing.

摘要

我们研究了锗酸盐光纤及其原始预制棒中两种不同的辐射诱导点缺陷——Ge(1)和Ge(2)中心的产生机制。使用共聚焦显微镜发光和电子顺磁共振技术对样品在X射线辐照前后进行了研究。我们的实验结果表明,与预制棒相比,光纤具有更高的辐射敏感性,并表明Ge(1)和Ge(2)的产生之间存在关联。为了解释我们的数据,我们使用了不同的模型,发现Ge(1)和Ge(2)缺陷在光纤中的破坏概率比在预制棒中更大,而产生概率则相似。最后我们发现,光纤在低剂量下较高的辐射敏感性主要与拉丝产生的锗孤对中心的存在有关。

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