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硅光子芯片中的超高速波长转换

Ultra-high-speed wavelength conversion in a silicon photonic chip.

作者信息

Hu Hao, Ji Hua, Galili Michael, Pu Minhao, Peucheret Christophe, Christian H Mulvad Hans, Yvind Kresten, Hvam Jørn M, Jeppesen Palle, Oxenløwe Leif K

机构信息

DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, DK-2800 Kgs. Lyngby, Denmark.

出版信息

Opt Express. 2011 Oct 10;19(21):19886-94. doi: 10.1364/OE.19.019886.

Abstract

We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from two-photon-absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips with high data integrity and indicate that high-speed operation can be obtained at moderate power levels where nonlinear absorption due to TPA and free-carrier absorption (FCA) is not detrimental. This demonstration can potentially enable high-speed optical networks on a silicon photonic chip.

摘要

我们基于低功率四波混频(FWM),在硅光子芯片中成功演示了640 Gbit/s线速率归零差分相移键控(RZ-DPSK)信号的全光波长转换,其开关能量仅为~110 fJ/比特。硅纳米线的波导色散经过纳米工程优化,以实现FWM的相位匹配,并且用于信号处理的开关功率足够低,可减少双光子吸收(TPA)引起的非线性吸收。这些结果表明,在硅芯片中可实现具有高数据完整性的高速波长转换,并且表明在TPA和自由载流子吸收(FCA)引起的非线性吸收无害的中等功率水平下,可以实现高速运行。这一演示有可能在硅光子芯片上实现高速光网络。

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