School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Small. 2012 Jan 9;8(1):63-7. doi: 10.1002/smll.201101016. Epub 2011 Oct 20.
Single- and multilayer MoS(2) films are deposited onto Si/SiO(2) using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS(2) device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS(2) devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.
采用机械剥离技术将单层和多层 MoS(2) 薄膜沉积在 Si/SiO(2) 上。然后，将这些薄膜用于制造场效应晶体管 (FET)。这些 FET 器件可用作气体传感器来检测一氧化二氮 (NO)。虽然在暴露于 NO 后，单层 MoS(2) 器件显示出快速响应，但发现电流不稳定。而对于 2 层、3 层和 4 层 MoS(2) 器件，即使在 0.8 ppm 的低浓度下，也能对 NO 表现出稳定和敏感的响应。
