NanoCenter and Electron Microscopy Center, University of South Carolina, 715 Sumter St., Columbia, SC 29208, USA.
Ultramicroscopy. 2012 Jan;112(1):69-75. doi: 10.1016/j.ultramic.2011.09.019. Epub 2011 Oct 3.
Multislice frozen phonon calculations were performed on a model structure of a complex oxide which has potential use as an ammoxidation catalyst. The structure has 11 cation sites in the framework, several of which exhibit mixed Mo/V substitution. In this paper the sensitivity of high-angle annular dark-field (HAADF) imaging to partial substitution of V for Mo in this structure is reported. While the relationship between the average V content in an atom column and the HAADF image intensity is not independent of thickness, it is a fairly weak function of thickness suggesting that HAADF STEM imaging in certain cases can provide a useful starting point for Rietveld refinements of mixed occupancy in complex materials. The thermal parameters of the various cations and oxygen anions in the model affect the amount of thermal diffuse scattering and therefore the intensity in the HAADF images. For complex materials where the structure has been derived via powder Rietveld refinement, the uncertainty in the thermal parameters may limit the accuracy of HAADF image simulations. With the current interest in quantitative microscopy, simulations need to accurately describe the electron scattering to the very high angles often subtended by a HAADF detector. For this system approximately 15% of the scattering occurs above 200 mrad at 200 kV. To simulate scattering to such high angles, very fine sampling of the projected potential is necessary which increases the computational cost of the simulation.
多晶冻结声子计算在一个具有氨氧化催化剂应用潜力的复杂氧化物模型结构上进行。该结构的骨架中有 11 个阳离子位,其中几个位显示出 Mo/V 混合取代。本文报道了在这种结构中 V 部分取代 Mo 对高角度环形暗场(HAADF)成像的敏感性。虽然原子列中平均 V 含量与 HAADF 图像强度之间的关系不独立于厚度,但它是厚度的一个相当弱的函数,这表明在某些情况下,HAADF STEM 成像可以为复杂材料中混合占据的 Rietveld 精修提供有用的起点。模型中各种阳离子和氧阴离子的热参数会影响热漫散射的量,从而影响 HAADF 图像的强度。对于通过粉末 Rietveld 精修得出结构的复杂材料,热参数的不确定性可能会限制 HAADF 图像模拟的准确性。由于当前对定量显微镜的兴趣,模拟需要准确描述电子散射到 HAADF 探测器通常包含的非常高的角度。对于该系统,在 200 kV 时,200 mrad 以上的散射约占 15%。为了模拟如此高的角度散射,需要对投影势进行非常精细的采样,这增加了模拟的计算成本。