Azzam R M A
Department of Electrical Engineering, University of New Orleans, Louisiana 70148, USA.
Appl Opt. 2011 Nov 20;50(33):6272-6. doi: 10.1364/AO.50.006272.
Conditions for the production of near-circular polarization states of the evanescent field present in the rarer medium in total internal reflection of incident monochromatic p-polarized light at a dielectric-dielectric planar interface are determined. Such conditions are satisfied if high-index (>3.2) transparent prism materials (e.g., GaP and Ge) are used at angles of incidence well above the critical angle but sufficiently below grazing incidence. Furthermore, elliptical polarization of incident light with nonzero p and s components can be tailored to cause circular polarization of the resultant tangential electric field in the plane of the interface or circular polarization of the transverse electric field in a plane normal to the direction of propagation of the evanescent wave. Such polarization control of the evanescent field is significant, e.g., in the fluorescent excitation of molecules adsorbed at solid-liquid and solid-gas interfaces by total internal reflection.
确定了在电介质 - 电介质平面界面处,入射单色p偏振光全内反射时,在较稀薄介质中存在的倏逝场产生近圆偏振态的条件。如果使用高折射率(>3.2)的透明棱镜材料(例如,GaP和Ge),且入射角远高于临界角但充分低于掠入射角,则可满足这些条件。此外,具有非零p和s分量的入射光的椭圆偏振可以被调整,以使界面平面内的合成切向电场产生圆偏振,或者使垂直于倏逝波传播方向的平面内的横向电场产生圆偏振。这种对倏逝场的偏振控制具有重要意义,例如,在通过全内反射对吸附在固 - 液和固 - 气界面的分子进行荧光激发方面。