Lee Chao-Kuei, Yang Chan-Shan, Lin Sung-Hui, Huang Shiuan-Hua, Wada Osamu, Pan Ci-Ling
Department of Photonics, National Sun-Yat-Sen University, Kaohsiung, 80400 Taiwan.
Opt Express. 2011 Nov 21;19(24):23689-97. doi: 10.1364/OE.19.023689.
Terahertz (THz) radiation can be generated more efficiently from a low-temperature-grown GaAs (LT-GaAs) photoconductive (PC) antenna by considering the two-photon absorption (TPA) induced photo-carrier in the photoconductor. A rate-equation-based approach using the Drude-Lorentz model taking into account the band-diagram of LT-GaAs is used for the theoretical analysis. The use of transform-limited pulses at the PC antenna is critical experimentally. Previously unnoticed THz pulse features and anomalously increasing THz radiation power rather than saturation were observed. These are in good agreement with the theoretical predictions. The interplay of intensity dependence and dynamics of generation of photoexcited carriers by single-photon absorption and TPA for THz emission is discussed.
通过考虑低温生长砷化镓(LT-GaAs)光电导(PC)天线中双光子吸收(TPA)诱导的光载流子,可以更有效地产生太赫兹(THz)辐射。基于速率方程的方法使用考虑了LT-GaAs能带图的德鲁德-洛伦兹模型进行理论分析。在实验中,在PC天线上使用变换极限脉冲至关重要。观察到了以前未被注意到的太赫兹脉冲特征以及太赫兹辐射功率异常增加而非饱和的情况。这些与理论预测非常吻合。讨论了单光子吸收和TPA产生光激发载流子的强度依赖性和动力学对于太赫兹发射的相互作用。