通过掺锰氮化镓中间带光探测实现InGaN/GaN多量子阱中450毫电子伏特的线性光子上转换

Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection.

作者信息

Huang Feng-Wen, Sheu Jinn-Kong, Lee Ming-Lun, Tu Shang-Ju, Lai Wei-Chih, Tsai Wen-Che, Chang Wen-Hao

机构信息

Department of Photonics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City 70101, Taiwan.

出版信息

Opt Express. 2011 Nov 7;19 Suppl 6:A1211-8. doi: 10.1364/OE.19.0A1211.

DOI:10.1364/OE.19.0A1211

PMID:22109617

Abstract

Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vapor-phase epitaxy are demonstrated. The up-converters exhibit a significant up-converted photoluminescence (UPL) signal. Power-dependent UPL and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs. Photons convert from 2.54 to 2.99 eV via a single-photon absorption process to exhibit a linear up-conversion photon energy of ~450 meV without applying bias voltage. Therefore, the up-conversion process could be interpreted within the uncomplicated energy level model.

摘要

展示了通过金属有机气相外延生长的具有掺锰氮化镓中间带光探测层和氮化铟镓/氮化镓多量子阱（MQW）发光层的上转换异质结构。这些上转换器表现出显著的上转换光致发光（UPL）信号。功率相关的UPL和光谱响应表明，UPL发射是由于光载流子从掺锰氮化镓层注入到氮化铟镓/氮化镓多量子阱中。光子通过单光子吸收过程从2.54 eV转换到2.99 eV，在不施加偏置电压的情况下呈现约450 meV的线性上转换光子能量。因此，上转换过程可以在简单的能级模型中得到解释。