Ahn Sung-Min, Moon Kyoung-Woong, Choe Sug-Bong
Department of Physics, Seoul National University, Seoul, 151-747, Republic of Korea.
J Nanosci Nanotechnol. 2011 Jul;11(7):6472-5. doi: 10.1166/jnn.2011.4477.
Reported herein is a possible way of controlling the depinning field of magnetic domain walls (DWs) by using a magnetic field H(T) transverse to the nanowire. A typical notch structure-in the form of triangles on both edges of ferromagnetic Permalloy nanowires-is employed to pin the DWs. The depinning field of the DW initially pinned at the notch is then measured with respect to H(T). Interestingly, it is experimentally found that the depinning field is drastically decreased to almost 0 with increasing H(T), due to the internal shift of the DW position at the notch. Moreover, it is experimentally observed that an oscillatory behavior of the depinning field occurs with respect to H(T), Micromagnetic calculation is performed to model the depinning behavior of the DW pinned at the notch structure with respect to H(T). It is ascribed to the natural edge roughness of the nanowire, which means the edge roughness plays an important role in determination of the depinning field.
本文报道了一种通过使用垂直于纳米线的磁场H(T)来控制磁畴壁(DWs)脱钉场的可能方法。采用一种典型的缺口结构——在铁磁坡莫合金纳米线的两边呈三角形——来固定DWs。然后相对于H(T)测量最初固定在缺口中的DW的脱钉场。有趣的是,实验发现随着H(T)的增加,脱钉场急剧下降到几乎为0,这是由于DW在缺口处位置的内部移动。此外,实验观察到脱钉场相对于H(T)呈现出振荡行为。进行了微磁学计算以模拟固定在缺口结构处的DW相对于H(T)的脱钉行为。这归因于纳米线的自然边缘粗糙度,这意味着边缘粗糙度在脱钉场的确定中起着重要作用。