通过 p-n 结界面修饰来研究和提高窄带隙 Cu2SnS3 太阳能电池的光伏性能。
Study and enhance the photovoltaic properties of narrow-bandgap Cu2SnS3 solar cell by p-n junction interface modification.
机构信息
Shanghai Key Laboratory of Modern Optics System, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, 516 Jungong Road, Shanghai 200093, China.
出版信息
J Colloid Interface Sci. 2012 Jun 15;376(1):327-30. doi: 10.1016/j.jcis.2012.03.015. Epub 2012 Mar 13.
Photovoltaic properties of narrow-bandgap Cu(2)SnS(3) (CTS) are studied for the first time by employing a superstrate solar cell structure of fluorine-doped tin oxide (FTO) glass/TiO(2)/In(2)S(3)/CTS/Mo. The structural, optical, and electronic characteristics of the CTS make it great potential as bottom cell absorber material for low-cost thin film tandem solar cell application. Furthermore, by inserting a thin low temperature deposited In(2)S(3) layer between the In(2)S(3) buffer layer and the CTS absorber layer, an enhancement in the performance of the solar cell can be achieved, leading to about 75% improvement (η=1.92%) over the unmodified device (η=1.10%).
首次采用氟掺杂氧化锡（FTO）玻璃/TiO2/In2S3/CTS/Mo 顶电池结构研究了窄带隙 Cu2SnS3（CTS）的光伏性能。CTS 的结构、光学和电子特性使其很有潜力作为低成本薄膜串联太阳能电池应用的底电池吸收材料。此外，通过在 In2S3缓冲层和 CTS 吸收层之间插入一层低温沉积的 In2S3薄层，可以提高太阳能电池的性能，使未改性器件（η=1.10%）的效率提高约 75%（η=1.92%）。
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