Department of Physical Chemistry and Technology of Polymers, Section of Physics and Applied Mathematics, Silesian University of Technology, Ks. M. Strzody 9, 44-100 Gliwice, Poland.
Eur Biophys J. 2012 Jun;41(6):505-26. doi: 10.1007/s00249-012-0806-8. Epub 2012 Apr 7.
Several approaches to ion-channel gating modelling have been proposed. Although many models describe the dwell-time distributions correctly, they are incapable of predicting and explaining the long-term correlations between the lengths of adjacent openings and closings of a channel. In this paper we propose two simple random-walk models of the gating dynamics of voltage and Ca(2+)-activated potassium channels which qualitatively reproduce the dwell-time distributions, and describe the experimentally observed long-term memory quite well. Biological interpretation of both models is presented. In particular, the origin of the correlations is associated with fluctuations of channel mass density. The long-term memory effect, as measured by Hurst R/S analysis of experimental single-channel patch-clamp recordings, is close to the behaviour predicted by our models. The flexibility of the models enables their use as templates for other types of ion channel.
已经提出了几种离子通道门控建模方法。尽管许多模型可以正确描述停留时间分布，但它们无法预测和解释通道相邻打开和关闭之间的长时间相关性。在本文中，我们提出了两种电压和 Ca(2+)-激活钾通道门控动力学的简单随机游动模型，它们定性地再现了停留时间分布，并很好地描述了实验观察到的长期记忆。给出了两个模型的生物学解释。特别是，相关性的起源与通道质量密度的波动有关。通过实验单通道膜片钳记录的 Hurst R/S 分析测量的长期记忆效应，与我们模型预测的行为非常接近。模型的灵活性使其可以用作其他类型离子通道的模板。
