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由p型碲化铋纳米粉末制备的热电厚膜的制备与表征

Fabrication and characterization of thermoelectric thick film prepared from p-type bismuth telluride nanopowders.

作者信息

Kim Kyung Tae, Ha Gook Hyun

机构信息

Powder Technology Research Group, Korea Institute of Materials Science, 797 Changwon-daero, Seongsan-gu, Changwon-si, Gyeongnam 641-831, Republic of Korea.

出版信息

J Nanosci Nanotechnol. 2012 Feb;12(2):1577-80. doi: 10.1166/jnn.2012.4681.

Abstract

In this study, bismuth telluride (Bi2Te3)-based nanopowders with particle size ranging from 100 to 300 nm are prepared by high-energy ball milling. Then, the prepared nanopowders are homogeneously mixed with organic binders to form a paste; this paste is used as the raw material to prepare thick-film thermoelectric modules. The thick film prepared by screen printing followed by hot pressing of p-type pastes show reproducible thermoelectric properties, exhibiting an electrical resistivity of 2.0 m Omega cm and a Seebeck coefficient of 298 muVK-1. The prepared p-type Bi2Te3 thick film has a high power factor because its Seebeck coefficient is significantly higher than that of Bi2Te3 based-bulk materials. These results indicate that a thick film prepared from bismuth telluride nanopowders has potential for use as high-performance thermoelectric modules in practical applications such as power generation and cooling system in electronic devices.

摘要

在本研究中,通过高能球磨制备了粒径范围为100至300nm的碲化铋(Bi2Te3)基纳米粉末。然后,将制备的纳米粉末与有机粘合剂均匀混合以形成糊状物;该糊状物用作制备厚膜热电模块的原料。通过丝网印刷然后对p型糊状物进行热压制备的厚膜显示出可重复的热电性能,其电阻率为2.0mΩ·cm,塞贝克系数为298μVK-1。所制备的p型Bi2Te3厚膜具有高功率因数,因为其塞贝克系数明显高于Bi2Te3基块状材料。这些结果表明,由碲化铋纳米粉末制备的厚膜在诸如电子设备中的发电和冷却系统等实际应用中具有用作高性能热电模块的潜力。

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