Department of Chemistry, National Central University, Jhongli, Taiwan 320, ROC.
Langmuir. 2012 Jul 3;28(26):10120-7. doi: 10.1021/la3011508. Epub 2012 Jun 20.
This study employed real-time in situ STM imaging to examine the adsorption of PEG molecules on Pt(111) modified by a monolayer of copper adatoms and the subsequent bulk Cu deposition in 1 M H(2)SO(4) + 1 mM CuSO(4)+ 1 mM KCl + 88 μM PEG. At the end of Cu underpotential deposition (0.35 V vs Ag/AgCl), a highly ordered Pt(111)-(√3 × √7)-Cu + HSO(4)(-) structure was observed in 1 M H(2)SO(4) + 1 mM CuSO(4). This adlattice restructured upon the introduction of poly(ethylene glycol) (PEG, molecular weight 200) and chloride anions. At the onset potential for bulk Cu deposition (0 V), a Pt(111)-(√3 × √3)R30°-Cu + Cl(-) structure was imaged with a tunneling current of 0.5 nA and a bias voltage of 100 mV. Lowering the tunneling current to 0.2 nA yielded a (4 × 4) structure, presumably because of adsorbed PEG200 molecules. The subsequent nucleation and deposition processes of Cu in solution containing PEG and Cl(-) were examined, revealing the nucleation of 2- to 3-nm-wide CuCl clusters on an atomically smooth Pt(111) surface at overpotentials of less than 50 mV. With larger overpotential (η > 150 mV), Cu deposition seemed to bypass the production of CuCl species, leading to layered Cu deposition, starting preferentially at step defects, followed by lateral growth to cover the entire Pt electrode surface. These processes were observed with both PEG200 and 4000, although the former tended to produce more CuCl nanoclusters. Raising [H(2)SO(4)] to 1 M substantiates the suppressing effect of PEG on Cu deposition. This STM study provided atomic- or molecular-level insight into the effect of PEG additives on the deposition of Cu.
本研究采用实时原位 STM 成像技术,研究了在 1 M H(2)SO(4) + 1 mM CuSO(4)+ 1 mM KCl + 88 μM PEG 中,PEG 分子在单层铜原子修饰的 Pt(111)表面上的吸附以及随后的体相 Cu 沉积过程。在 Cu 的欠电位沉积(0.35 V vs Ag/AgCl)结束时,在 1 M H(2)SO(4) + 1 mM CuSO(4)中观察到高度有序的 Pt(111)-(√3 × √7)-Cu + HSO(4)(-)结构。当引入聚乙二醇(PEG,分子量 200)和氯离子时,这种 adlattice 结构发生了重构。在体相 Cu 沉积的起始电位(0 V)下,以 0.5 nA 的隧道电流和 100 mV 的偏置电压成像 Pt(111)-(√3 × √3)R30°-Cu + Cl(-)结构。将隧道电流降低至 0.2 nA 时,得到一个(4 × 4)结构,这可能是由于吸附的 PEG200 分子所致。随后在含有 PEG 和 Cl(-)的溶液中研究了 Cu 的成核和沉积过程,发现 CuCl 团簇在原子级光滑的 Pt(111)表面上的成核,过电位小于 50 mV。在更大的过电位(η > 150 mV)下,Cu 的沉积似乎绕过了 CuCl 物种的产生,导致层状 Cu 的沉积,首先优先在台阶缺陷处开始,然后侧向生长以覆盖整个 Pt 电极表面。这些过程在使用 PEG200 和 4000 时都观察到了,尽管前者往往会产生更多的 CuCl 纳米团簇。将 [H(2)SO(4)] 提高到 1 M 证实了 PEG 对 Cu 沉积的抑制作用。这项 STM 研究提供了原子或分子水平上的见解,了解 PEG 添加剂对 Cu 沉积的影响。