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电刺激小脑顶核减少排斥性导向分子的表达,促进局灶性脑缺血后轴突的生长。

Fastigial nucleus electrostimulation reduces the expression of repulsive guidance molecule, improves axonal growth following focal cerebral ischemia.

机构信息

Chongqing Key Laboratory of Neurology, Department of Neurology, The First Affiliated Hospital of Chongqing Medical University, Chongqing 400016, China.

出版信息

Neurochem Res. 2012 Sep;37(9):1906-14. doi: 10.1007/s11064-012-0809-y. Epub 2012 Jun 13.

Abstract

The role of repulsive guidance molecule A (RGMa) in cerebral ischemia remains unclear. In the study, we examined the expression of RGMa in ischemic brain tissues following focal cerebral ischemia/reperfusion (IR) in rats. An established middle cerebral artery suture occlusion model was employed. A dipolar electrode was placed into the cerebellum to stimulate the cerebellar fastigial nucleus for 1 h at 2 h after ischemia. Reverse transcription-polymerase chain reaction was used to measure the mRNA RGMa and its downstream mediator, Ras homolog A (RhoA). Immunohistochemistry was applied to detect RGMa and RhoA expressions and to evaluate axonal regeneration by optical density analysis of 200 kDa neurofilaments. We found that both mRNA and protein levels of RGMa and RhoA were increased in the ischemic cortex and hippocampus 48 h following cerebral IR and these elevated levels were maintained for 2 weeks. Electrostimulation of the fastigial nucleus reduced the expression of RGMa and RhoA at 24 h and 2 weeks following cerebral IR. In addition, axonal growth was enhanced in the fastigial nucleus electrostimulated group compared to non-stimulated ischemic animals (P < 0.05). RGMa/RhoA expression was negatively correlated with the growth of axons (P < 0.05). Therefore, we concluded that RGMa and RhoA could be another key molecule and might inhibit axonal regeneration during cerebral IR injury. Electrostimulation of the fastigial nucleus enhances axonal growth, possibly by reducing the expression of RGMa and RhoA after cerebral IR.

摘要

排斥性导向分子 A(RGMa)在脑缺血中的作用尚不清楚。在本研究中,我们检测了大鼠局灶性脑缺血/再灌注(IR)后缺血脑组织中 RGMa 的表达。采用已建立的大脑中动脉线栓阻塞模型。在缺血后 2 小时,将双极电极置于小脑内以刺激小脑顶核 1 小时。采用反转录-聚合酶链反应(RT-PCR)检测 RGMa 及其下游介质 Ras 同源物 A(RhoA)的 mRNA。免疫组织化学检测 RGMa 和 RhoA 的表达,并通过 200kDa 神经丝光密度分析评估轴突再生。我们发现,脑 IR 后 48 小时缺血皮质和海马区 RGMa 和 RhoA 的 mRNA 和蛋白水平均升高,并持续 2 周。顶核电刺激可降低脑 IR 后 24 小时和 2 周时 RGMa 和 RhoA 的表达。此外,与未刺激的缺血动物相比,顶核电刺激组的轴突生长增强(P<0.05)。RGMa/RhoA 表达与轴突生长呈负相关(P<0.05)。因此,我们得出结论,RGMa 和 RhoA 可能是脑 IR 损伤过程中另一个关键分子,可能抑制轴突再生。顶核电刺激可增强轴突生长,可能是通过降低脑 IR 后 RGMa 和 RhoA 的表达。

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