GaSe薄膜的纳米压痕

Nanoindentation of GaSe thin films.

作者信息

Jian Sheng-Rui, Ku Shin-An, Luo Chih-Wei, Juang Jenh-Yih

机构信息

Department of Materials Science and Engineering, I-Shou University, Main Campus No,1, Sec, 1, Syuecheng Rd,, Dashu District, Kaohsiung, 84001, Taiwan.

出版信息

Nanoscale Res Lett. 2012 Jul 17;7(1):403. doi: 10.1186/1556-276X-7-403.

DOI:10.1186/1556-276X-7-403

PMID:22804961

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4113972/

Abstract

The structural and nanomechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(111) substrates by pulsed laser deposition. XRD patterns reveal only the pure (000 l)-oriented reflections originating from the hexagonal GaSe phase and no trace of any impurity or additional phases. Nanoindentation results exhibit discontinuities (so-called multiple 'pop-in' events) in the loading segments of the load-displacement curves, and the continuous stiffness measurements indicate that the hardness and Young's modulus of the hexagonal GaSe films are 1.8 ± 0.2 and 65.8 ± 5.6 GPa, respectively.

摘要

通过X射线衍射（XRD）和纳米压痕技术研究了GaSe薄膜的结构和纳米力学性能。采用脉冲激光沉积法在Si(111)衬底上沉积了GaSe薄膜。XRD图谱仅显示出源自六方GaSe相的纯(000 l)取向反射，未发现任何杂质或额外相的痕迹。纳米压痕结果显示，在载荷-位移曲线的加载段存在不连续性（即所谓的多次“弹出”事件），连续刚度测量表明，六方GaSe薄膜的硬度和杨氏模量分别为1.8±0.2 GPa和65.8±5.6 GPa。