Baek Seung Jun, Chang Ho Jung
Department of Electronics Engineering, Dankook University, Cheonan 330-714, Korea.
J Nanosci Nanotechnol. 2012 Apr;12(4):3606-10. doi: 10.1166/jnn.2012.5660.
White polymer light emitting diodes (WPLEDs) with a glass/ITO/PEDOT:PSS/PFO:MDMO-PPV/ TPBI/LIF/Al structure were fabricated in order to investigate the optimum doping concentration of the emission materials. PEDOT:PSS was introduced as the hole transport material. The PFO and MDMO-PPV were used as the light emitting host and the guest materials, respectively. The PFO:MDMO-PPV mixed solution was spin-coated onto the PEDOT:PSS/ITO substrate. TPBI, LiF and Al were deposited by thermal evaporation as the hole blocking, electron injection, and cathode materials, respectively. As a result, the current density and luminance of the WPLED with the 20.0 wt% MDMO-PPV concentration in the PFO host material were found to be about 365 mA/cm2 and 4315 cd/m2, respectively. The maximum external quantum efficiency (EQE) of the same sample was found to be 11.26%, which may be ascribed to the efficient energy transfer from the PFO host to the MDMO-PPV guest material.
为了研究发光材料的最佳掺杂浓度,制备了具有玻璃/氧化铟锡/聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐/聚芴:聚(2-甲氧基-5-(3′,7′-二甲基辛氧基)-1,4-苯撑乙烯撑)/ 2,2',2''-(1,3,5-苯三嗪-4,6-二基)三(1-苯基-1H-苯并咪唑)/氟化锂/铝结构的白色聚合物发光二极管(WPLED)。引入聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐作为空穴传输材料。聚芴和聚(2-甲氧基-5-(3′,7′-二甲基辛氧基)-1,4-苯撑乙烯撑)分别用作发光主体材料和客体材料。将聚芴:聚(2-甲氧基-5-(3′,7′-二甲基辛氧基)-1,4-苯撑乙烯撑)混合溶液旋涂到聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐/氧化铟锡衬底上。通过热蒸发分别沉积2,2',2''-(1,3,5-苯三嗪-4,6-二基)三(1-苯基-1H-苯并咪唑)、氟化锂和铝作为空穴阻挡、电子注入和阴极材料。结果发现,在聚芴主体材料中聚(2-甲氧基-5-(3′,7′-二甲基辛氧基)-1,4-苯撑乙烯撑)浓度为20.0 wt%的WPLED的电流密度和亮度分别约为365 mA/cm²和4315 cd/m²。同一样品的最大外量子效率(EQE)为11.26%,这可能归因于从聚芴主体到聚(2-甲氧基-5-(3′,7′-二甲基辛氧基)-1,4-苯撑乙烯撑)客体材料的有效能量转移。