Institute of Inorganic Chemistry, Academy of Sciences of the Czech Republic, vvi, Husinec-Řež, Czech Republic.
Langmuir. 2012 Aug 28;28(34):12518-26. doi: 10.1021/la302334x. Epub 2012 Aug 15.
Two different positional isomers of 1,2-dicarba-closo-dodecaboranedithiols, 1,2-(HS)(2)-1,2-C(2)B(10)H(10) (1) and 9,12-(HS)(2)-1,2-C(2)B(10)H(10) (2), have been investigated as cluster building blocks for self-assembled monolayers (SAMs) on copper surfaces. These two isomers represent a convenient system in which the attachment of SH groups at different positions on the skeleton affects their acidic character and thus also determines their reactivity with a copper surface. Isomer 1 exhibited etching of polycrystalline Cu films, and a detailed investigation of the experimental conditions showed that both the acidic character of SH groups and the presence of oxygen at the copper surface play crucial roles in how the surface reaction proceeds: whether toward a self-assembled monolayer or toward copper film etching. We found that each positional isomer requires completely different conditions for the preparation of a SAM on copper surfaces. Optimized conditions for the former isomer required the exposure of a freshly prepared Cu surface to vapor of 1 in vacuum, which avoided the presence of oxygen and moisture. Adsorption from a dichloromethane solution afforded a sparsely covered Cu(0) surface; isomer 1 effectively removes the surface copper(I) oxide, forming a soluble product, but apparently binds only weakly to the clean Cu(0) surface. In contrast, adsorption of the latter, less volatile isomer proceeded better from a dichloromethane solution than from the vapor phase. Isomer 2 was even able to densely cover the copper surface cleaned up by the dichloromethane solution of 1. Both isomers exhibited high capacity to remove oxygen atoms from the surface copper(I) oxide that forms immediately after the exposure of freshly prepared copper films to ambient atmosphere. Isomer 2 showed suppression of Cu film oxidation. A number of methods including X-ray photoelectron spectroscopy (XPS), X-ray Rutherford back scattering (RBS), proton-induced X-ray emission (PIXE) analysis, atomic force microscopy (AFM), cyclic voltammetry, and contact angle measurements were used to investigate the experimental conditions for the preparation of SAMs of both positional isomers on copper surfaces and to shed light on the interaction between these molecules and a polycrystalline copper surface.
两种不同位置异构体的 1,2-二碳杂-closo-十二硼烷二硫醇,1,2-(HS)(2)-1,2-C(2)B(10)H(10)(1)和 9,12-(HS)(2)-1,2-C(2)B(10)H(10)(2),已被研究为自组装单层(SAMs)在铜表面的团簇构建块。这两种异构体代表了一个方便的系统,其中 SH 基团在骨架上的不同位置的附着会影响它们的酸性,从而也决定了它们与铜表面的反应性。异构体 1 表现出多晶 Cu 薄膜的腐蚀,对实验条件的详细研究表明,SH 基团的酸性和铜表面上氧的存在都在表面反应的进行方式中起着至关重要的作用:是朝着自组装单层还是朝着铜薄膜腐蚀。我们发现,每个位置异构体都需要完全不同的条件来在铜表面制备 SAM。优化的条件下,前者异构体需要将新鲜制备的 Cu 表面暴露在真空下的 1 的蒸汽中,这避免了氧和湿气的存在。从二氯甲烷溶液中吸附得到稀疏覆盖的 Cu(0)表面;异构体 1 有效地去除表面铜(I)氧化物,形成可溶产物,但显然仅与清洁的 Cu(0)表面弱结合。相比之下,后者异构体的吸附更容易从二氯甲烷溶液中进行,而不是从气相中进行。异构体 2 甚至能够覆盖用 1 的二氯甲烷溶液清洗过的铜表面。两种异构体都表现出从立即形成的新鲜制备的铜薄膜暴露于环境气氛后的表面铜(I)氧化物中去除氧原子的高能力。异构体 2 显示出抑制 Cu 薄膜氧化的作用。使用了包括 X 射线光电子能谱(XPS)、X 射线卢瑟福背散射(RBS)、质子诱导 X 射线发射(PIXE)分析、原子力显微镜(AFM)、循环伏安法和接触角测量在内的多种方法来研究两种位置异构体在铜表面上制备 SAM 的实验条件,并揭示这些分子与多晶铜表面之间的相互作用。