Pablant N A, Bitter M, Delgado-Aparicio L, Goto M, Hill K W, Lazerson S, Morita S, Roquemore A L, Gates D, Monticello D, Nielson H, Reiman A, Reinke M, Rice J E, Yamada H
Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543, USA.
Rev Sci Instrum. 2012 Aug;83(8):083506. doi: 10.1063/1.4744935.
First results of ion and electron temperature profile measurements from the x-ray imaging crystal spectrometer (XICS) diagnostic on the Large Helical Device (LHD) are presented. This diagnostic system has been operational since the beginning of the 2011 LHD experimental campaign and is the first application of the XICS diagnostic technique to helical plasma geometry. The XICS diagnostic provides measurements of ion and electron temperature profiles in LHD with a spatial resolution of 2 cm and a maximum time resolution of 5 ms (typically 20 ms). Ion temperature profiles from the XICS diagnostic are possible under conditions where charge exchange recombination spectroscopy (CXRS) is not possible (high density) or is perturbative to the plasma (low density or radio frequency heated plasmas). Measurements are made by using a spherically bent crystal to provide a spectrally resolved 1D image of the plasma from line integrated emission of helium-like Ar(16 +). The final hardware design and configuration are detailed along with the calibration procedures. Line-integrated ion and electron temperature measurements are presented, and the measurement accuracy is discussed. Finally central temperature measurements from the XICS system are compared to measurements from the Thomson scattering and CXRS systems, showing excellent agreement.
本文介绍了在大型螺旋装置（LHD）上利用X射线成像晶体光谱仪（XICS）诊断系统进行离子和电子温度剖面测量的初步结果。该诊断系统自2011年LHD实验运行开始就投入使用，是XICS诊断技术在螺旋等离子体几何结构中的首次应用。XICS诊断系统能够测量LHD中的离子和电子温度剖面，空间分辨率为2厘米，最大时间分辨率为5毫秒（通常为20毫秒）。在电荷交换复合光谱法（CXRS）无法进行（高密度）或对等离子体有扰动（低密度或射频加热等离子体）的条件下，利用XICS诊断系统可以测量离子温度剖面。测量是通过使用球形弯曲晶体，从类氦氩（16 +）线积分发射中提供等离子体的光谱分辨一维图像来进行的。详细介绍了最终的硬件设计和配置以及校准程序。给出了线积分离子和电子温度测量结果，并讨论了测量精度。最后，将XICS系统的中心温度测量结果与汤姆逊散射和CXRS系统的测量结果进行了比较，结果显示出极佳的一致性。
