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桥连寡聚噻吩的电子和光学性质的理论研究。

Theoretical investigations on the electronic and optical properties of bridged oligothiophenes.

机构信息

Centre de Formation des Instituteurs, BP 8, Errachidia, Morocco.

出版信息

J Phys Chem A. 2012 Oct 4;116(39):9730-8. doi: 10.1021/jp301633r. Epub 2012 Sep 24.

Abstract

A study of the structure, electronic, and optical properties of oligothiophenes is reported. Geometry optimizations of the ground state of derivatives of these molecules were carried out using the density functional theory (DFT) with the B3LYP functional and the 6-31G(d) basis set. Bridged oligothiophenes by C═O, C═S, and C═C(CN)(2) functional groups were found to be planar in their electronic ground states (S(0)). The electronic excitation transitions of the bridged oligothiophenes were investigated using the time-dependent TD-DFT method performed on the ground-state optimized geometries. For all the derivatives, excitation to the S(1) state corresponds mainly to the HOMO → LUMO transition. The excitation energies are found in fair agreement with the experimental values. The optimization (relaxation) of the first singlet excited electronic state (S(1)) has been done using the restricted configuration interaction (singles) (RCIS/6-31G(d) approach. The electronically excited geometries favor a more quinoidic type structure. Emission energies have been obtained from TD-DFT calculations performed on the excited-state optimized geometries S(1). The change of group (C═O, C═S, and C═C(CN)(2)) as well as the incorporation of monomer moieties induce a significant decrease in the excitation and emission energies.

摘要

报道了对寡聚噻吩的结构、电子和光学性质的研究。使用密度泛函理论(DFT)与 B3LYP 函数和 6-31G(d)基组对这些分子的衍生物的基态进行了几何优化。在电子基态(S(0))中,通过 C═O、C═S 和 C═C(CN)(2)官能团桥接的寡聚噻吩是平面的。使用基于基态优化几何形状的时间相关 TD-DFT 方法研究了桥接寡聚噻吩的电子激发跃迁。对于所有衍生物,激发到 S(1)态主要对应于 HOMO → LUMO 跃迁。激发能与实验值吻合较好。使用受限组态相互作用(单重态)(RCIS/6-31G(d)方法对第一单重激发电子态(S(1))的优化(弛豫)进行了优化。电子激发的几何形状有利于更类醌型结构。通过在激发态优化几何形状 S(1)上进行 TD-DFT 计算获得了发射能。基团(C═O、C═S 和 C═C(CN)(2))的变化以及单体部分的掺入会显著降低激发和发射能。

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