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边缘掺杂石墨烯纳米带中的自旋输运

Spin transport in be edge-doped graphene nanoribbon.

作者信息

Wu Ting-Ting, Wang Xue-Feng, Jiang Yongjing, Zhou Liping

机构信息

Department of Physics, Soochow University, Suzhou, 215006, China.

出版信息

J Nanosci Nanotechnol. 2012 Aug;12(8):6467-71. doi: 10.1166/jnn.2012.5440.

Abstract

We report an atomistic simulation of spin dependent charge transport in zigzag graphene nanoribbons with 4 zigzag chains doped by a Beryllium atom on one edge. The spin dependent density functional theory with norm-conserving atomic basis set is employed to describe the system and the current versus voltage behavior is calculated by the nonequilibrium Green's function method for quantum transport. The Be impurity atom suppresses the local magnetization near the edge and the transmitted charge current becomes spin polarized accordingly. Both spin-up and spin-down transmission spectra are modified significantly but in different ways. Distinguished from the previous doping results of other impurity elements, here we observe negative differential resistance for only one of the spins in the nonlinear transport regime below bias 1.5 V. Molecular projected Hamiltonian energy spectrum near the impurity shows that the impurity removes the energy degeneracy of spin in perfect ribbon. The current versus voltage shows semiconductor behavior with fluctuating spin polarization of amplitude up to 37%.

摘要

我们报道了对具有4个锯齿链的锯齿形石墨烯纳米带的自旋相关电荷输运的原子模拟,该纳米带的一条边缘由一个铍原子掺杂。采用具有守恒规范原子基组的自旋相关密度泛函理论来描述该系统,并通过非平衡格林函数方法计算量子输运的电流与电压行为。铍杂质原子抑制了边缘附近的局部磁化,相应地,传输的电荷电流变得自旋极化。自旋向上和自旋向下的传输谱都有显著改变,但方式不同。与之前其他杂质元素的掺杂结果不同,在这里我们观察到在低于1.5 V偏压的非线性输运区域中,只有一种自旋存在负微分电阻。杂质附近的分子投影哈密顿能谱表明,杂质消除了完美纳米带中自旋的能量简并。电流与电压显示出半导体行为,自旋极化波动幅度高达37%。

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