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应用 Hubbard 模型于 Cp*(2)Yb(bipy),这是镧系元素体系中强交换耦合的模型体系。

Application of the Hubbard model to Cp*(2)Yb(bipy), a model system for strong exchange coupling in lanthanide systems.

机构信息

Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.

出版信息

Inorg Chem. 2012 Oct 1;51(19):10105-10. doi: 10.1021/ic300037q. Epub 2012 Sep 18.

Abstract

Exchange coupling is quantified in lanthanide (Ln) single-molecule magnets (SMMs) containing a bridging N(2)(3-) radical ligand and between Cp*(2)Yb and bipy(•-) in Cp*(2)Yb(bipy), where Cp* is pentamethylcyclopentadienyl and bipy is 2,2'-bipyridyl. In the case of these lanthanide SMMs, the magnitude of exchange coupling between the Ln ion and the bridging N(2)(3-), 2J, is very similar to the barrier to magnetic relaxation, U(eff). A molecular version of the Hubbard model is applied to systems in which unpaired electrons on magnetic metal ions have direct overlap with unpaired electrons residing on ligands. The Hubbard model explicitly addresses electron correlation, which is essential for understanding the magnetic behavior of these complexes. This model is applied quantitatively to Cp*(2)Yb(bipy) to explain its very strong exchange coupling, 2J = -0.11 eV (-920 cm(-1)). The model is also used to explain the presence of strong exchange coupling in Ln SMMs in which the lanthanide spins are coupled via bridging N(2)(3-) radical ligands. The results suggest that increasing the magnetic coupling in lanthanide clusters could lead to an increase in the blocking temperatures of exchange-coupled lanthanide SMMs, suggesting routes to rational design of future lanthanide SMMs.

摘要

交换耦合在含有桥接 N(2)(3-)自由基配体的镧系(Ln)单分子磁体(SMM)中被量化,并存在于 Cp*(2)Yb和 Cp*(2)Yb(bipy)中的 bipy(-)之间,其中 Cp是五甲基环戊二烯基,bipy 是 2,2'-联吡啶。对于这些镧系 SMM,Ln 离子与桥接 N(2)(3-)之间的交换耦合强度 2J 非常类似于磁弛豫的势垒 U(eff)。未配对电子在磁性金属离子上的分子版本 Hubbard 模型应用于具有直接重叠的未配对电子驻留在配体上的系统中。Hubbard 模型明确解决了电子相关问题,这对于理解这些配合物的磁行为至关重要。该模型被定量应用于 Cp(2)Yb(bipy),以解释其非常强的交换耦合,2J = -0.11 eV(-920 cm(-1))。该模型还用于解释通过桥接 N(2)(3-)自由基配体连接的镧系 SMM 中存在强交换耦合的原因。结果表明,增加镧系簇中的磁耦合可能会导致交换耦合镧系 SMM 的阻挡温度增加,这表明了未来镧系 SMM 合理设计的途径。

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