LUNAM Université, University of Angers, MOLTECH-Anjou UMR CNRS 6200, SCL Group, 2 boulevard Lavoisier, Angers, France.
J Org Chem. 2013 Feb 15;78(4):1497-503. doi: 10.1021/jo302571u. Epub 2013 Feb 6.
3-Fluoro-4-hexylthiophene has been prepared by a synthetic route involving perbromination of 3-hexylthiophene followed by protection of the 2- and 5-positions of thiophene by trimethylsilyl groups and bromine/fluorine exchange. As expected, 3-hexyl-4-fluorothiophene oxidizes at a higher potential than 3-hexylthiophene; however, all attempts to electropolymerize this new thiophenic monomer have remained unsuccessful. Three terthienyls containing 3-hexylthiophene, 3-fluoro-4-hexylthiophene, and 3-bromo-4-hexylthiophene as the median group have been synthesized and used as substrates for electropolymerization. The electronic properties of the starting terthienyls and the resulting polymers have been analyzed by cyclic voltammetry and UV-vis spectroscopy, and the effects of substitution of the median thiophene ring are discussed.
3-氟-4-己基噻吩可通过以下合成路线制备:先用过溴化反应对 3-己基噻吩进行溴化,然后用三甲基硅基保护噻吩的 2-位和 5-位,再进行溴-氟交换。正如预期的那样,3-己基-4-氟噻吩的氧化电位高于 3-己基噻吩;然而,所有尝试电化学聚合这种新的噻吩单体的努力都没有成功。三种包含 3-己基噻吩、3-氟-4-己基噻吩和 3-溴-4-己基噻吩作为中位基团的三联噻吩已被合成,并用作电化学聚合的底物。通过循环伏安法和紫外可见光谱分析了起始三联噻吩和所得聚合物的电子性质,并讨论了中位噻吩环取代的影响。