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以总最小二乘误差为目标函数,通过模拟退火进行电阻抗断层成像重建。

Electrical impedance tomography reconstruction through simulated annealing with total least square error as objective function.

作者信息

Martins Thiago de Castro, Tsuzuki Marcos de Sales Guerra

机构信息

Computational Geometry Laboratory, Escola Politécnica, São Paulo University, Brazil.

出版信息

Annu Int Conf IEEE Eng Med Biol Soc. 2012;2012:1518-21. doi: 10.1109/EMBC.2012.6346230.

Abstract

The EIT reconstruction problem can be solved as an optimization problem where the divergence between a simulated impedance domain and the observed one is minimized. This optimization problem can be solved by a combination of Simulated Annealing (SA) for optimization and Finite Element Method (FEM) for simulation of the impedance domain. This combination has usually a very high computational cost, since SA requires an elevated number of objective function evaluations and those, obtained through FEM, are often expansive enough to make the whole process inviable. In here it is presented a new approach for EIT image reconstructions using SA and partial evaluations of objective functions based on overdetermined linear systems. This new reconstruction approach is evaluated with experimental data and compared with previous approaches.

摘要

电阻抗断层成像(EIT)重建问题可作为一个优化问题来解决,即最小化模拟阻抗域与观测阻抗域之间的差异。该优化问题可通过将用于优化的模拟退火算法(SA)和用于阻抗域模拟的有限元方法(FEM)相结合来解决。这种组合通常计算成本非常高,因为SA需要大量的目标函数评估,而通过FEM获得的评估通常成本高昂,足以使整个过程无法进行。本文提出了一种使用SA和基于超定线性系统的目标函数部分评估进行EIT图像重建的新方法。该新重建方法通过实验数据进行评估,并与先前的方法进行比较。

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