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新型四元碲(硫)属化合物 Tl18Pb2M7Q25(M = Ti、Zr 和 Hf;Q = S 和 Se):晶体结构、电子结构和输运性质。

New quaternary chalcogenides, Tl18Pb2M7Q25 (M = Ti, Zr, and Hf; Q = S and Se): crystal structure, electronic structure, and electrical transport properties.

机构信息

Department of Chemistry and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1.

出版信息

Inorg Chem. 2013 Feb 18;52(4):1895-900. doi: 10.1021/ic3020699. Epub 2013 Feb 1.

Abstract

We have synthesized new quaternary chalcogenides of the general formula Tl(18)Pb(2)M(7)Q(25) (M = Ti, Zr and Hf, Q = S, Se), and studied their crystal and electronic structures. They are all isostructural, with a large cubic unit cell of space group Pa3, and a = 17.0952(6) Å in case of Tl(18)Pb(2)Ti(7)S(25) (with four formula units per cell). The structure is composed of several interesting subunits such as isolated M(7)Q(24) entities, weakly connected Tl(9)Pb supertetrahedra (or 4-capped distorted octahedra) and STl(6) distorted octahedra. The finite unit M(7)Q(24) is formed by seven edge-shared MQ(6) octahedra wherein all except the central one are distorted because of the neighborhood of Tl(+) ions that carry a lone pair of electrons. These materials are semiconductors with all elements in their common oxidation states, for example, (Tl(+))(18)(Pb(2+))(2)(Ti(4+))(7)(S(2-))(25). The calculations yielded band gaps of 0.64 eV for the sulfides Tl(18)Pb(2)Ti(7)S(25) and 1.0 eV for Tl(18)Pb(2)Zr(7)S(25). The selenide Tl(18)Pb(2)Ti(7)Se(25) was calculated to have a band gap of 0.44 eV. Electrical conductivity measurements and reflectance spectroscopy also revealed the semiconducting nature of these samples, with experimentally determined gaps between 0.10 and 0.50 eV.

摘要

我们合成了通式为 Tl(18)Pb(2)M(7)Q(25)(M=Ti、Zr 和 Hf,Q=S、Se)的新的季族四元硫族化物,并研究了它们的晶体和电子结构。它们都是同构的,具有空间群 Pa3 的大立方单元,Tl(18)Pb(2)Ti(7)S(25)的 a = 17.0952(6) Å(每个晶胞有四个分子式单位)。该结构由几个有趣的亚单位组成,如孤立的 M(7)Q(24)实体、弱连接的 Tl(9)Pb 超四面体(或 4 帽变形八面体)和 STl(6)变形八面体。有限单元 M(7)Q(24)由七个边缘共享的 MQ(6)八面体组成,其中除了中心一个之外,所有的八面体都因 Tl(+)离子的邻域而变形,这些离子带有孤对电子。这些材料是具有所有元素常见氧化态的半导体,例如,(Tl(+))(18)(Pb(2+))(2)(Ti(4+))(7)(S(2-))(25)。计算得到 Tl(18)Pb(2)Ti(7)S(25)和 Tl(18)Pb(2)Zr(7)S(25)的硫化物的能带隙为 0.64 eV,Tl(18)Pb(2)Ti(7)Se(25)的硒化物的能带隙为 0.44 eV。电导率测量和反射率光谱也揭示了这些样品的半导体性质,实验确定的带隙在 0.10 和 0.50 eV 之间。

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