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Ultrafast optical technique for measuring the electrical dependence of the elasticity of piezoelectric thin film: demonstration on AlN.

作者信息

Devos A, Emery P, Defay E, Ben Hassine N, Parat G

机构信息

Institut d'Électronique, de Microélectronique et de Nanotechnologie, Unité Mixte de Recherche CNRS 8250, Avenue Poincaré BP 69, F-59652 Villeneuve d'Ascq Cedex, France.

出版信息

Rev Sci Instrum. 2013 Jan;84(1):015007. doi: 10.1063/1.4788936.

Abstract

We present a technique based on ultrafast acoustics which permits us to measure the electrical dependence of the elastic properties of a thin piezoelectric layer. Ultrafast acoustics offers a unique way of measuring elastic properties of thin-layer in a non-destructive way using ultrashort optical pulses. We apply this technique to a thin layer to which a dc voltage is simultaneously applied. Both the film thickness and the sound velocity are affected. The two effects can be separated by use of a semi-transparent top electrode. A demonstration is made on a thin aluminum nitride (AlN). From that the d(33) piezoelectric coefficient and the stiffness variation induced by the bias in AlN are measured.

摘要

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