Effective electron mass in quantum wires of III-V, ternary and quaternary materials.

In this paper, an attempt is made to study the effective electron mass (EEM) in Quantum wires (QWs) of III-V, ternary and quaternary materials on the basis of three and two band models of Kane within the framework of k x p formalism. It has been found, taking QWs of InAs, InSb, GaAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(t) that the 1D EEM increases with electron concentration per unit length and decreases with increasing film thickness respectively. For ternary and quaternary materials the EEM increases with increase in alloy composition. Under certain special conditions all the results for all the 1-D materials get simplified into the well known parabolic energy bands and thus confirming the compatibility test. The results of this paper find two applications in the fields of nanoscience and technology.