State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, P R China.
ACS Appl Mater Interfaces. 2013 May 22;5(10):4350-5. doi: 10.1021/am4003815. Epub 2013 May 13.
In this paper, we report chemical vapor phase polymerization (VPP) deposition of novel poly(3,4-ethylenedioxythiophene) (PEDOT)/graphene nanocomposites as solid tantalum electrolyte capacitor cathode films. The PEDOT/graphene films were successfully prepared on porous tantalum pentoxide surface as cathode films through the VPP procedure. The results indicated that the high conductivity nature of PEDOT/graphene leads to the decrease of cathode films resistance and contact resistance between PEDOT/graphene and carbon paste. This nanocomposite cathode film based capacitor showed ultralow equivalent series resistance (ESR) ca. 12 mΩ and exhibited better capacitance-frequency performance than the PEDOT based capacitor. The leakage current investigation revealed that the device encapsulation process does not influence capacitor leakage current, indicating the excellent mechanical strength of PEDOT-graphene films. The graphene showed a distinct protection effect on the dielectric layer from possible mechanical damage. This high conductivity and mechanical strength graphene based conducting polymer nanocomposites indicated a promising application future for organic electrode materials.
本文报道了通过化学气相聚合(VPP)沉积新型聚(3,4-乙撑二氧噻吩)(PEDOT)/石墨烯纳米复合材料作为固态钽电解质电容器的阴极薄膜。通过 VPP 程序,PEDOT/石墨烯薄膜成功地制备在多孔五氧化二钽表面上作为阴极薄膜。结果表明,PEDOT/石墨烯的高导电性导致阴极薄膜电阻和 PEDOT/石墨烯与碳膏之间的接触电阻降低。基于这种纳米复合材料的阴极薄膜的电容器具有超低的等效串联电阻(ESR)约为 12 mΩ,并且比基于 PEDOT 的电容器具有更好的电容-频率性能。漏电流研究表明,器件封装过程不会影响电容器的漏电流,表明 PEDOT-石墨烯薄膜具有优异的机械强度。石墨烯对介电层可能受到的机械损伤表现出明显的保护作用。这种具有高导电性和机械强度的基于石墨烯的导电聚合物纳米复合材料为有机电极材料的应用提供了广阔的前景。