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受能 X 射线辐射诱导的 ZnO 纳米线的微观结构变化及其对场发射性能的影响。

Microstructure change of ZnO nanowire induced by energetic x-ray radiation and its effect on the field emission properties.

机构信息

State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, People's Republic of China.

出版信息

Nanotechnology. 2013 Jul 12;24(27):275703. doi: 10.1088/0957-4484/24/27/275703. Epub 2013 Jun 13.

Abstract

The changes in the microstructure of ZnO nanowire were studied after exposure to different radiation doses of energetic x-rays. Detailed structural, composition and optical analyses were carried out. It was found that the surface composition changed and defects were formed in the irradiated ZnO nanowires. The structural change of ZnO nanowires after thermal treatment was also studied and similar defects were observed. It is proposed that phonon-induced localized heating is the main reason for the observed changes in microstructure. Finally, the field emission properties of ZnO nanowires before and after x-ray radiation were studied. It was found that the increase of work function and change in morphology induced by the irradiation were the reasons for the observed change in field emission properties.

摘要

研究了 ZnO 纳米线在不同能量 X 射线辐射剂量下的微观结构变化。进行了详细的结构、组成和光学分析。结果发现,辐照 ZnO 纳米线的表面组成发生了变化,形成了缺陷。还研究了热处理后 ZnO 纳米线的结构变化,观察到了类似的缺陷。提出了声子诱导局部加热是观察到微观结构变化的主要原因。最后,研究了 X 射线辐射前后 ZnO 纳米线的场发射性能。发现辐照引起的功函数增加和形貌变化是场发射性能变化的原因。

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