Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore.
ACS Appl Mater Interfaces. 2013 Jul 24;5(14):6687-93. doi: 10.1021/am4014488. Epub 2013 Jul 1.
This paper reports that high performance metal oxide thin film transistors (TFTs) can be achieved by using LiF-doped ZnO thin films processed from aqueous solution. It was found that LiF doping at an appropriate amount enhanced the oxide film carrier concentration. The TFTs based on the 10 mol % LiF-doped ZnO thin films annealed at 300 °C revealed a good device performance with an average electron mobility of 8.9 cm(2) V(-1) s(-1) and a high on/off current ratio of 4 × 10(7), superior to the devices based on the nondoped ZnO TFTs (1.6 cm(2) V(-1) s(-1)). Even when annealed at 150 °C, the device still showed good transistor operation with an electron mobility of 0.54 cm(2) V(-1) s(-1). The inverted bulk heterojunction solar cells based on P3HT:PCBM blend system fabricated using 10 mol % LiF doped ZnO as electron selective layer showed higher power conversion efficiency (η = 3.3%) than that from undoped ZnO thin films (η = 2.94%) due to enhanced short circuit current (Jsc = 10.55 mA/cm(2)). Our results suggest that LiF incorporation can be a useful technique to produce high performance and low temperature solution-processed oxide TFTs and interface layer for solar cells.
本文报道了通过使用从水溶液中处理的掺 LiF 的 ZnO 薄膜，可以实现高性能的金属氧化物薄膜晶体管 (TFT)。研究发现，适量的 LiF 掺杂可以提高氧化物薄膜的载流子浓度。基于在 300°C 下退火的 10 mol% LiF 掺杂 ZnO 薄膜的 TFT 具有良好的器件性能，平均电子迁移率为 8.9 cm(2) V(-1) s(-1)，开/关电流比高达 4×10(7)，优于基于未掺杂 ZnO TFT 的器件 (1.6 cm(2) V(-1) s(-1))。即使在 150°C 下退火，器件仍表现出良好的晶体管性能，电子迁移率为 0.54 cm(2) V(-1) s(-1)。使用 10 mol% LiF 掺杂 ZnO 作为电子选择层的 P3HT:PCBM 混合体系制备的反型体异质结太阳能电池的功率转换效率 (η = 3.3%)高于未掺杂 ZnO 薄膜 (η = 2.94%)，这是由于短路电流 (Jsc = 10.55 mA/cm(2))增强所致。我们的结果表明，LiF 掺入可以是一种有用的技术，用于制造高性能和低温溶液处理的氧化物 TFT 以及太阳能电池的界面层。
