Center for Integrated Functional Materials & Department of Physics, University of South Florida, Tampa, Florida 33620, United States.
ACS Appl Mater Interfaces. 2013 Aug 14;5(15):7450-7. doi: 10.1021/am401771z. Epub 2013 Jul 18.
Highly textured cobalt ferrite (CFO) thin films were grown on Si (100) substrates using oblique-angle pulsed laser deposition (α-PLD). X-ray diffraction and in-depth strain analysis showed that the obliquely deposited CFO films had both enhanced orientation in the (111) crystal direction as well as tunable compressive strains as a function of the film thicknesses, in contrast to the almost strain-free polycrystalline CFO films grown using normal-incidence PLD under the same conditions. Using in situ optical plume diagnostics the growth parameters in the α-PLD process were optimized to achieve smoother film surfaces with roughness values as low as 1-2 nm as compared to the typical values of 10-12 nm in the normal-incidence PLD grown films. Cross-sectional high resolution transmission electron microscope images revealed nanocolumnar growth of single-crystals of CFO along the (111) crystallographic plane at the film-substrate interface. Magnetic measurements showed larger coercive fields (∼10 times) with similar saturation magnetization in the α-PLD-grown CFO thin films as compared to those deposited using normal-incidence PLD. Such significantly enhanced magnetic coercivity observed in CFO thin films make them ideally suited for magnetic data storage applications. A growth mechanism based on the atomic shadowing effect and strain compression-relaxation mechanism was proposed for the obliquely grown CFO thin films.
采用斜角脉冲激光沉积(α-PLD)在 Si(100)衬底上生长了高度织构的钴铁氧体(CFO)薄膜。X 射线衍射和深度应变分析表明,与在相同条件下使用垂直入射 PLD 生长的几乎无应变的多晶 CFO 薄膜相比,斜沉积的 CFO 薄膜在(111)晶向具有增强的取向,并且可以根据薄膜厚度调节压缩应变。通过原位光学羽流诊断优化了α-PLD 工艺中的生长参数,以实现更光滑的薄膜表面,粗糙度值低至 1-2nm,而在垂直入射 PLD 生长的薄膜中典型值为 10-12nm。横截面高分辨率透射电子显微镜图像显示,CFO 沿(111)晶面在薄膜-衬底界面处呈单晶纳米柱状生长。磁测量结果表明,与使用垂直入射 PLD 沉积的 CFO 薄膜相比,α-PLD 生长的 CFO 薄膜具有更大的矫顽场(约 10 倍)和相似的饱和磁化强度。在 CFO 薄膜中观察到的这种显著增强的磁矫顽力使它们非常适合磁数据存储应用。提出了一种基于原子阴影效应和应变压缩松弛机制的斜角生长 CFO 薄膜的生长机制。