硅纳米线的增强拉曼成像和纳米光谱学研究
Tip-enhanced Raman imaging and nano spectroscopy of etched silicon nanowires.
机构信息
Department of Chemistry and Centre for Advanced Materials and Biomaterials, University of Western Ontario, 1151 Richmond Street, London, N6A 5B7, Canada.
出版信息
Sensors (Basel). 2013 Sep 25;13(10):12744-59. doi: 10.3390/s131012744.
Tip-enhanced Raman spectroscopy (TERS) is used to investigate the influence of strains in isolated and overlapping silicon nanowires prepared by chemical etching of a (100) silicon wafer. An atomic force microscopy tip made of nanocrystalline diamond coated with a thin layer of silver is used in conjunction with an excitation wavelength of 532 nm in order to probe the first order optical phonon mode of the [100] silicon nanowires. The frequency shift and the broadening of the silicon first order phonon are analyzed and compared to the topographical measurements for distinct configuration of nanowires that are disposed in straight, bent or overlapping configuration over a microscope coverslip. The TERS spatial resolution is close to the topography provided by the nanocrystalline diamond tip and subtle spectral changes are observed for different nanowire configurations.
利用 tips-enhanced Raman 光谱（TERS）研究了通过（100）硅片化学腐蚀制备的孤立和重叠硅纳米线中的应变的影响。使用涂有薄银层的纳米晶金刚石原子力显微镜 tip，结合 532nm 的激发波长，用于探测[100]硅纳米线的一阶光学声子模式。分析了硅一阶声子的频移和展宽，并与显微镜盖玻片上以直、弯或重叠方式排列的不同纳米线构型的形貌测量结果进行了比较。TERS 的空间分辨率接近纳米晶金刚石 tip 提供的形貌，并且对于不同的纳米线构型观察到了细微的光谱变化。
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