基于氮化镓的高性能发光二极管，采用图案化蓝宝石衬底，带有图案化复合二氧化硅/氧化铝钝化层和二氧化钛/氧化铝分布式布拉格反射器背面反射层。

High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

作者信息

Guo Hao, Zhang Xiong, Chen Hongjun, Zhang Peiyuan, Liu Honggang, Chang Hudong, Zhao Wei, Liao Qinghua, Cui Yiping

出版信息

Opt Express. 2013 Sep 9;21(18):21456-65. doi: 10.1364/OE.21.021456.

DOI:10.1364/OE.21.021456

Abstract

GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.

摘要

已经提出并制造了基于氮化镓的发光二极管（LED），其采用图案化蓝宝石衬底（PSS），带有图案化复合SiO₂/Al₂O₃钝化层和TiO₂/Al₂O₃分布布拉格反射器（DBR）背面反射器。通过原子层沉积（ALD）技术，在氧化铟锡（ITO）层上沉积了具有优异均匀性和质量的高度钝化Al₂O₃层。在60 mA电流注入下，与仅具有单个SiO₂钝化层的传统LED相比，具有图案化复合SiO₂/Al₂O₃钝化层的LED、具有图案化复合SiO₂/Al₂O₃钝化层和银镜+3对TiO₂/SiO₂ DBR背面反射器的LED以及具有图案化复合SiO₂/Al₂O₃钝化层和银镜+3对ALD生长的TiO₂/Al₂O₃ DBR背面反射器的LED在460 nm波长处的光输出功率（LOP）分别提高了21.6%、59.7%和63.4%。