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通过利用量子点中共存的两种对称性引起的晶格畸变来调谐能隙。

Bandgap tuning by using a lattice distortion induced by two symmetries that coexist in a quantum dot.

机构信息

Department of Materials Science and Engineering, and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea.

出版信息

Small. 2014 Apr 9;10(7):1300-7. doi: 10.1002/smll.201303040. Epub 2013 Oct 20.

Abstract

Among the interests in the application of quantum dots (QDs), the bandgap tuning is of key importance in controlling their material properties. The bandgap of a QD can be adjusted by adopting a variety of different physicochemical methods. Herein, a novel way of the bandgap tuning is developed in an Ag2S-based QD system by suitably quenching the transformation from monoclinic Ag2S to cubic Ag and by subsequently inducing a lattice-distorted region of ≈1-nm-scale in a QD. The two distinct crystalline phases of Ag2S and Ag coexisting with the lattice-distorted region are experimentally demonstrated by visually showing this remarkable coexistence in a QD. A new approach is presented to the bandgap tuning (2.51 to 1.64 eV) and enhancing optical properties by suitably tailoring the degree of the lattice-distorted region in a QD. This conceptual method could pave a new way to utilizing quantum effects in various QD applications.

摘要

在量子点(QDs)的应用中,带隙调谐对于控制其材料性质至关重要。可以通过多种不同的物理化学方法来调整 QD 的带隙。在此,通过适当淬灭从单斜 Ag2S 到立方 Ag 的转变,并随后在 QD 中诱导约 1nm 尺度的晶格畸变区域,在基于 Ag2S 的 QD 系统中开发了一种新的带隙调谐方法。Ag2S 和 Ag 的两个不同晶相与晶格畸变区域共存,通过在 QD 中直观地显示这种显著的共存,实验证明了这一点。通过适当调整 QD 中晶格畸变区域的程度,提出了一种新的带隙调谐(2.51 到 1.64 eV)和增强光学性质的方法。这种概念性方法可能为在各种 QD 应用中利用量子效应开辟一条新途径。

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